Memory cell that employs a selectively grown reversible resistance-switching element and methods of forming the same
AssigneeSanDisk 3D LLC
InventorsApril Schricker, Brad Herner, Mark Clark
Life of this patent
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Abstract
In some aspects, a method of forming a memory cell is provided that includes (1) forming a first conductor above a substrate; (2) forming a reversible resistance-switching element above the first conductor using a selective growth process; (3) forming a diode above the first conductor; and (4) forming a second conductor above the diode and the reversible resistance-switching element. Numerous other aspects are provided.
Claims30
A method of forming a memory cell comprising:
- forming a steering element above a substrate;
- and
- forming a reversible resistance-switching element coupled to the steering element, wherein the reversible resistance-switching element is formed using a selective growth process comprising forming a Ti-nitride containing layer, etching the titanium nitride containing layer and oxidizing the etched Ti-nitride containing layer.
A method of forming a memory cell comprising:
- forming a first conductor above a substrate;
- forming a reversible resistance-switching element above the first conductor, wherein the reversible resistance-switching element is formed using a selective growth process comprising forming a Ti-nitride containing layer, etching the Ti-nitride containing layer, and oxidizing the etched Ti-nitride containing layer;
- forming a diode above the first conductor;
- and
- forming a second conductor above the diode and the reversible resistance-switching element.
A method of forming a memory cell comprising:
- forming a first conductor above a substrate;
- forming a titanium nitride layer above the first conductor;
- selectively forming a reversible resistance-switching element by etching the titanium nitride layer, and oxidizing the etched titanium nitride layer;
- forming a vertical polycrystalline diode above the reversible resistance-switching element;
- and
- forming a second conductor above the vertical polycrystalline diode.
A method of forming a memory cell, the method comprising:
- forming a steering element above a substrate;
- and
- forming a reversible resistance-switching element coupled to the steering element, wherein the reversible resistance-switching element comprises an etched and oxidized Ti-nitride material.
Dependencies are inferred from the claim text.