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US 12,568,776 B2Granted
Multifilament resistive memory with insulation layers
AssigneeInternational Business Machines Corporation
InventorsPaul Michael Solomon, Takashi Ando, Eduard Albert Cartier, John Rozen
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Abstract
A grain-boundary self-aligned resistive memory structure is provided enabling the closely-packed formation of multiple, oxide-based, ReRAM elements in parallel, each with its own compliance resistor. The structure is capable of forming multiple filaments, one per element, with the aim of reducing the variability in the composite ReRAM cell.
Claims12
A non-volatile memory (NVM) structure comprising:
- a filament forming layer located on a first metal layer;
- a plurality of pillar structures located on, and in direct physical contact with, the filament forming layer, wherein each pillar structure of the plurality of pillar structures includes a vertical stack of a second metal pillar and a resistive pillar;
- a dielectric isolation structure located between each pillar structure of the plurality of pillar structures, wherein the dielectric isolation structure has a topmost surface that is coplanar with a topmost surface of each of the pillar structures;
- and
- a third metal layer located on top of, and in direct physical contact with, the plurality of pillar structures.
2 more elements
A non-volatile memory (NVM) structure comprising:
- a plurality of resistive random access memory (ReRAM) elements located between a first metal layer and a third metal layer, wherein each ReRAM element comprises a filament forming layer, a filament located in the filament forming layer, and a pillar structure comprising a vertical stack of a second metal pillar and a resistive pillar, wherein the pillar structure is located on, and is in direct physical contact with, the filament forming layer, and the resistive pillar is in direct physical contact with the third metal layer, and each ReRAM element is connected in parallel to the first metal layer and the third metal layer;
- and
- a dielectric isolation structure located laterally adjacent to the pillar structure, wherein the dielectric isolation structure has a topmost surface that is coplanar with a topmost surface of the pillar structure.
Dependencies are inferred from the claim text.