Semiconductor device and manufacturing method of semiconductor device
AssigneeSK hynix Inc.
InventorsSang Chul OH, Myoungsub KIM, Jae Hyuk PARK, Beom Seok LEE, Won Jun LEE
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Abstract
A semiconductor device may include: a stack including electrode plates and insulating layers that are alternately stacked; an electrode pillar extending through the stack; a variable resistance layer surrounding a sidewall of the electrode pillar; and first electrodes located between the electrode plates and the variable resistance layer, respectively, and each including metal oxide.
Claims43
A semiconductor device comprising:
- a stack including electrode plates and insulating layers that are alternately stacked;
- an electrode pillar extending through the stack;
- a variable resistance layer provided over a sidewall of the electrode pillar and extending through the electrode plates and the insulating layers;
- and
- first electrodes located between the electrode plates and the variable resistance layer, respectively, and each first electrode including metal oxide.
A semiconductor device, comprising:
- a plurality of memory cells that are stacked along a direction;
- an electrode pillar extending along the direction and through the plurality of the memory cells;
- a variable resistance layer provided over a sidewall of the electrode pillar and shared by the memory cells, the variable resistance layer extending between the first and the second electrodes of the memory cells;
- and
- a first electrode provided over the variable resistance layer and shared by the memory cells, wherein the first electrode includes metal oxide.
A method for manufacturing a semiconductor device, the method comprising:
- forming a stack including electrode plates and insulating layers that are alternately stacked;
- forming a first opening extending through the stack to expose the electrode plates;
- forming first electrodes on or over the exposed electrode plates, the first electrodes each including metal oxide;
- forming a variable resistance layer in the first opening;
- and
- forming an electrode pillar in the variable resistance layer.
A method for manufacturing a semiconductor device, the method comprising:
- forming a stack including sacrificial layers and insulating layers that are alternately stacked;
- forming a first opening extending through the stack;
- forming a first electrode in the first opening, the first electrode including metal oxide;
- forming a variable resistance layer along a surface of the first electrode;
- forming an electrode pillar along a surface of the variable resistance layer;
- and
- replacing the sacrificial layers with electrode plates.
Dependencies are inferred from the claim text.