H10N 70/021
Formation of switching materials
Official title: {Formation of switching materials, e.g. deposition of layers}
H10N70/021 (Formation of switching materials) appears on 3,178 US grants and 3,733 published applications in this corpus.
Search patents in H10N- Granted patents
- 3,178
- Published applications
- 3,733
- Assignees
- 469
- Inventors
- 3,610
- Latest grant
- 6 Oct 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 4 | 0 |
| 1977 | 3 | 0 |
| 1978 | 1 | 0 |
| 1979 | 2 | 0 |
| 1980 | 0 | 0 |
| 1981 | 1 | 0 |
| 1982 | 1 | 0 |
| 1983 | 0 | 0 |
| 1984 | 1 | 0 |
| 1985 | 0 | 0 |
| 1986 | 0 | 0 |
| 1987 | 0 | 0 |
| 1988 | 0 | 0 |
| 1989 | 2 | 0 |
| 1990 | 1 | 0 |
| 1991 | 1 | 0 |
| 1992 | 1 | 0 |
| 1993 | 1 | 0 |
| 1994 | 8 | 0 |
| 1995 | 4 | 0 |
| 1996 | 1 | 0 |
| 1997 | 2 | 0 |
| 1998 | 3 | 0 |
| 1999 | 2 | 0 |
| 2000 | 1 | 0 |
| 2001 | 1 | 0 |
| 2002 | 0 | 6 |
| 2003 | 3 | 22 |
| 2004 | 14 | 53 |
| 2005 | 26 | 56 |
| 2006 | 45 | 75 |
| 2007 | 28 | 85 |
| 2008 | 46 | 133 |
| 2009 | 53 | 165 |
| 2010 | 133 | 192 |
| 2011 | 147 | 173 |
| 2012 | 165 | 194 |
| 2013 | 206 | 239 |
| 2014 | 257 | 288 |
| 2015 | 282 | 222 |
| 2016 | 243 | 197 |
| 2017 | 178 | 171 |
| 2018 | 155 | 144 |
| 2019 | 175 | 221 |
| 2020 | 215 | 254 |
| 2021 | 195 | 183 |
| 2022 | 128 | 172 |
| 2023 | 137 | 152 |
| 2024 | 107 | 126 |
| 2025 | 123 | 118 |
| 2026 | 76 | 92 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Subgroups
Granted patents
Recent patents
- Process for cointegration of two phase change memory (PCM) arrays having different phase change materials, and in-memory computation system utilizing the two PCM arrays6 Oct 2026US 12,757,642 B2STMicroelectronics International N. V.
- Electrostatic discharge path for preventing plasma-induced damage during patterning of phase change material and method for forming the same6 Oct 2026US 12,757,643 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Three-dimensional memory array and preparation method thereof22 Sep 2026US 12,744,062 B2Peking University
- Carbon film integrated into a back end of line process15 Sep 2026US 12,740,332 B2Sky Water Technology Foundry, Inc.
- Semiconductor integrated circuit device with first memory cell and third memory cell, and manufacturing method therefor15 Sep 2026US 12,740,333 B2Xiamen Industrial Technology Research Institute Co., Ltd.
- Novel pcm device8 Oct 2026US 2026/0314270 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Semiconductor device and method for forming the same8 Oct 2026US 2026/0314271 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Multifunctional low-power optoelectronic memristors device and method of manufacturing thereof8 Oct 2026US 2026/0314273 A1Korea University Research and Business Foundation
- Resistive random-access memory (rram) devices with electrodes containing ruthenium alloys8 Oct 2026US 2026/0314274 A1TetraMem Inc.
- Method of forming chalcogenide-based thin film using atomic layer deposition process and method of manufacturing non-volatile memory device using the same1 Oct 2026US 2026/0305184 A1Foundation for Research and Business, Seoul National University of Science and Technology
Most cited
By later US patents
- Thin-film structure for chalcogenide electrical switching devices and process therefor556US 5,177,567 AEnergy Conversion Devices, Inc. · 1993
- Multibit single cell memory element having tapered contact545US 5,687,112 AEnergy Conversion Devices, Inc. · 1997
- Electrically erasable memory elements characterized by reduced current and improved thermal stability456US 5,534,712 AEnergy Conversion Devices, Inc. · 1996
- Memory element with energy control mechanism416US 5,933,365 AEnergy Conversion Devices, Inc. · 1999
- Composite memory material comprising a mixture of phase-change memory material and dielectric material389US 5,825,046 AEnergy Conversion Devices, Inc. · 1998