H10N 70/023
By chemical vapor deposition
Official title: {by chemical vapor deposition, e.g. MOCVD, ALD}
H10N70/023 (By chemical vapor deposition) appears on 969 US grants and 1,178 published applications in this corpus.
Search patents in H10N- Granted patents
- 969
- Published applications
- 1,178
- Assignees
- 199
- Inventors
- 1,439
- Latest grant
- 22 Sep 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1979 | 1 | 0 |
| 1980 | 0 | 0 |
| 1981 | 0 | 0 |
| 1982 | 0 | 0 |
| 1983 | 0 | 0 |
| 1984 | 0 | 0 |
| 1985 | 0 | 0 |
| 1986 | 0 | 0 |
| 1987 | 0 | 0 |
| 1988 | 0 | 0 |
| 1989 | 0 | 0 |
| 1990 | 0 | 0 |
| 1991 | 0 | 0 |
| 1992 | 1 | 0 |
| 1993 | 0 | 0 |
| 1994 | 1 | 0 |
| 1995 | 0 | 0 |
| 1996 | 0 | 0 |
| 1997 | 1 | 0 |
| 1998 | 1 | 0 |
| 1999 | 2 | 0 |
| 2000 | 0 | 0 |
| 2001 | 0 | 0 |
| 2002 | 0 | 3 |
| 2003 | 1 | 9 |
| 2004 | 3 | 17 |
| 2005 | 8 | 7 |
| 2006 | 17 | 22 |
| 2007 | 5 | 14 |
| 2008 | 9 | 33 |
| 2009 | 6 | 40 |
| 2010 | 37 | 59 |
| 2011 | 22 | 47 |
| 2012 | 44 | 62 |
| 2013 | 67 | 89 |
| 2014 | 107 | 120 |
| 2015 | 105 | 82 |
| 2016 | 80 | 51 |
| 2017 | 48 | 51 |
| 2018 | 43 | 48 |
| 2019 | 64 | 77 |
| 2020 | 71 | 73 |
| 2021 | 56 | 46 |
| 2022 | 28 | 54 |
| 2023 | 38 | 45 |
| 2024 | 37 | 51 |
| 2025 | 41 | 32 |
| 2026 | 25 | 46 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
- Three-dimensional memory array and preparation method thereof22 Sep 2026US 12,744,062 B2Peking University
- Phase change memory cell sidewall heater15 Sep 2026US 12,740,334 B2International Business Machines Corporation
- Memory device, memory integrated circuit and manufacturing method thereof15 Sep 2026US 12,740,339 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Memory cell, semiconductor device including memory cell, and manufacturing method thereof15 Sep 2026US 12,740,341 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Phase-change material (PCM) radio frequency (RF) switching device with novel spreader design1 Sep 2026US 12,727,397 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Novel pcm device8 Oct 2026US 2026/0314270 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Resistive random-access memory (rram) devices with electrodes containing ruthenium alloys8 Oct 2026US 2026/0314274 A1TetraMem Inc.
- Method of forming chalcogenide-based thin film using atomic layer deposition process and method of manufacturing non-volatile memory device using the same1 Oct 2026US 2026/0305184 A1Foundation for Research and Business, Seoul National University of Science and Technology
- Memory cell, semiconductor device including memory cell, and manufacturing method thereof1 Oct 2026US 2026/0305189 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Semiconductor device and method for fabricating the same17 Sep 2026US 2026/0282765 A1United Microelectronics Corp.
Most cited
By later US patents
- Memory element with energy control mechanism416US 5,933,365 AEnergy Conversion Devices, Inc. · 1999
- Methods of forming embedded resistors for resistive random access memory cells347US 9,142,764 B1Intermolecular, Inc. · 2015
- Resistive random accress memory containing a conformal titanium aluminum carbide film and method of making330US 10,361,366 B2Tokyo Electron Limited · 2019
- Amorphous silicon memory300US 5,360,981 ABritish Telecommunications Public Ltd.Co. · 1994
- Memories with cylindrical read/write stacks185US 9,227,456 B2SanDisk 3D LLC · 2016