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US 2026/0282765 A1Published application
Semiconductor device and method for fabricating the same
AssigneeUnited Microelectronics Corp.
InventorHui-Lin Wang
Life of this patent
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Abstract
A method for fabricating a resistive random access memory (RRAM) includes the steps of first providing a substrate having an alignment mark region and a RRAM region, forming an interlayer dielectric (ILD) layer on the substrate, forming a contact plug in the ILD layer of the RRAM region, forming a first bottom electrode (BE) layer on the RRAM region and the alignment mark region, and then removing the first BE layer and the ILD layer on the alignment mark region to form a trench.
Claims17
A method for fabricating a resistive random access memory (RRAM), comprising:
- providing a substrate having an alignment mark region and a RRAM region;
- forming an interlayer dielectric (ILD) layer on the substrate;
- forming a contact plug in the ILD layer of the RRAM region;
- forming a first bottom electrode (BE) layer on the RRAM region and the alignment mark region;
- and
- removing the first BE layer and the ILD layer on the alignment mark region to form a trench.
3 more elements
A resistive random access memory (RRAM), comprising:
- an interlayer dielectric (ILD) layer on a substrate;
- a contact plug in the ILD layer;
- and
- a bottom electrode on the contact plug, wherein the bottom electrode comprises:
- a first bottom electrode (BE) layer;
- and
- a second bottom electrode layer.
4 more elements
Dependencies are inferred from the claim text.