Methods of forming embedded resistors for resistive random access memory cells

Abstract

Provided are memory cells including resistive switching layers having silicon, oxygen, and nitrogen as well as embedded resistor layers having a metal, silicon, and nitrogen. In some embodiments, silicon may be partially or completely replaced with aluminum. The embedded resistor may also have oxygen. A resistive switching layer directly interfaces an embedded resistor layer of the same cell. A portion of each layer forming this interface may be formed substantially of silicon nitride and may be formed in the same deposition chamber without breaking vacuum. For example, these portions may be formed by sequential atomic layer deposition cycles. However, silicon concentrations in these portions may be different. Specifically, the silicon concentration of the embedded resistor portion may be less than the silicon concentration of the resistive switching layer portion. This variation may be achieved by varying one or more process conditions during fabrication of the memory cell.

Dependencies are inferred from the claim text.