H10N 70/026
By physical vapor deposition
Official title: {by physical vapor deposition, e.g. sputtering}
H10N70/026 (By physical vapor deposition) appears on 953 US grants and 1,168 published applications in this corpus.
Search patents in H10N- Granted patents
- 953
- Published applications
- 1,168
- Assignees
- 245
- Inventors
- 1,433
- Latest grant
- 15 Sep 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 2 | 0 |
| 1977 | 1 | 0 |
| 1978 | 1 | 0 |
| 1979 | 1 | 0 |
| 1980 | 0 | 0 |
| 1981 | 0 | 0 |
| 1982 | 0 | 0 |
| 1983 | 0 | 0 |
| 1984 | 0 | 0 |
| 1985 | 0 | 0 |
| 1986 | 0 | 0 |
| 1987 | 0 | 0 |
| 1988 | 0 | 0 |
| 1989 | 2 | 0 |
| 1990 | 1 | 0 |
| 1991 | 0 | 0 |
| 1992 | 1 | 0 |
| 1993 | 1 | 0 |
| 1994 | 2 | 0 |
| 1995 | 1 | 0 |
| 1996 | 1 | 0 |
| 1997 | 1 | 0 |
| 1998 | 2 | 0 |
| 1999 | 1 | 0 |
| 2000 | 0 | 0 |
| 2001 | 1 | 0 |
| 2002 | 0 | 4 |
| 2003 | 3 | 14 |
| 2004 | 7 | 38 |
| 2005 | 16 | 41 |
| 2006 | 30 | 42 |
| 2007 | 19 | 65 |
| 2008 | 26 | 72 |
| 2009 | 38 | 89 |
| 2010 | 81 | 115 |
| 2011 | 96 | 96 |
| 2012 | 91 | 72 |
| 2013 | 91 | 70 |
| 2014 | 74 | 72 |
| 2015 | 76 | 48 |
| 2016 | 55 | 37 |
| 2017 | 21 | 29 |
| 2018 | 29 | 21 |
| 2019 | 32 | 43 |
| 2020 | 38 | 42 |
| 2021 | 24 | 21 |
| 2022 | 14 | 30 |
| 2023 | 20 | 21 |
| 2024 | 17 | 35 |
| 2025 | 18 | 26 |
| 2026 | 18 | 25 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
- Carbon film integrated into a back end of line process15 Sep 2026US 12,740,332 B2Sky Water Technology Foundry, Inc.
- Phase-change material (PCM) radio frequency (RF) switching device with novel spreader design1 Sep 2026US 12,727,397 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Method for preparing reservoir element25 Aug 2026US 12,721,050 B2Institute of Microelectronics, Chinese Academy of Sciences
- Low current RRAM-based crossbar array circuit implemented with switching oxide engineering technologies18 Aug 2026US 12,713,842 B2TetraMem Inc.
- Resistive random-access memory (RRAM) devices with interface layers28 Jul 2026US 12,696,691 B2TetraMem Inc.
- Multifunctional low-power optoelectronic memristors device and method of manufacturing thereof8 Oct 2026US 2026/0314273 A1Korea University Research and Business Foundation
- Resistive random-access memory (rram) devices with electrodes containing ruthenium alloys8 Oct 2026US 2026/0314274 A1TetraMem Inc.
- Target for film deposition and method for producing functional layer24 Sep 2026US 2026/0286505 A1Nippon Electric Glass Co., Ltd.
- Memory including variable resistor24 Sep 2026US 2026/0290451 A1SK hynix Inc.
- Highly reliable resistive memory at high operation temperatures10 Sep 2026US 2026/0271626 A1APPLIED Materials.Inc.
Most cited
By later US patents
- Thin-film structure for chalcogenide electrical switching devices and process therefor556US 5,177,567 AEnergy Conversion Devices, Inc. · 1993
- Multibit single cell memory element having tapered contact545US 5,687,112 AEnergy Conversion Devices, Inc. · 1997
- Electrically erasable memory elements characterized by reduced current and improved thermal stability456US 5,534,712 AEnergy Conversion Devices, Inc. · 1996
- Memory element with energy control mechanism416US 5,933,365 AEnergy Conversion Devices, Inc. · 1999
- Composite memory material comprising a mixture of phase-change memory material and dielectric material389US 5,825,046 AEnergy Conversion Devices, Inc. · 1998