Low current RRAM-based crossbar array circuit implemented with switching oxide engineering technologies
AssigneeTetraMem Inc.
InventorsMinxian Zhang, Ning Ge
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Abstract
Switching oxide engineering technologies relating to low current RRAM-based crossbar array circuits are disclosed. A method for fabricating a crossbar device may include forming a bottom electrode on a substrate, forming a switching oxide stack on the bottom electrode, and forming a top electrode on the switching oxide stack. Fabricating the switching oxide stack may include fabricating a plurality of base oxide layers and a plurality of discontinuous oxide layers alternately stacked, wherein the base oxide layers comprise one or more base oxides, wherein the one or more base oxides comprise at least one of TaOx, HfOx, TiOx, or ZrOx.
Claims15
A method for fabricating a crossbar device, the method comprising:
- forming a bottom electrode on a substrate;
- forming a switching oxide stack on the bottom electrode, wherein fabricating the switching oxide stack comprises fabricating a plurality of base oxide layers and a plurality of discontinuous oxide layers alternately stacked, wherein the base oxide layers comprise one or more base oxides, wherein the one or more base oxides comprise at least one of TaOx, HfOx, TiOx, or ZrOx, wherein the plurality of discontinuous oxide layers comprises discontinuous oxide islands that are randomly located within the plurality of base oxide layers, and wherein the discontinuous oxide islands comprise at least one of Al2O3, SiO2, Si3N4, Y2O3, Gd2O3, Sm2O3, CeO2, or Er2O3;
- and
- forming a top electrode on the switching oxide stack.
Dependencies are inferred from the claim text.