Highly reliable resistive memory at high operation temperatures

Abstract

The present disclosure relates to a resistive memory device. The resistive memory device includes a bottom via couple to a bottom electrode layer. The bottom electrode layer is disposed over a substrate. The bottom electrode layer includes TiN, TaN, Ru, or combinations thereof. The resistive memory device further includes a switching layer disposed over the bottom electrode layer, a TaOx oxygen exchange layer disposed over the switching layer, and a top electrode layer disposed over the TaOx oxygen exchange layer. The top electrode layer is coupled to a top metal filled via.

Dependencies are inferred from the claim text.