Resistive random-access memory (RRAM) devices with interface layers

Abstract

The present disclosure relates to resistive random-access memory (RRAM) devices. An RRAM device may include a first electrode, an interface layer fabricated on the first electrode, a switching oxide layer comprising at least one transition metal oxide; and a second electrode fabricated on the switching oxide layer. The interface layer may include a discontinuous layer of a dielectric material and a conductive material deposited in the discontinuous layer of the dielectric material. The interface layer is positioned between the first electrode and the switching oxide layer. The dielectric material may be and/or include Al2O3, SiO2, Si3N4, MgO, Y2O3, Gd2O3, Sm2O3, CeO2, Er2O3, La2O3, etc. The conductive material may include a metal, a conductive oxide, a conductive nitride, etc.

Dependencies are inferred from the claim text.