Resistive memory device and manufacturing method of the resistive memory device
AssigneeSK hynix Inc.
InventorIn Ku KANG
Life of this patent
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Abstract
There are provided a resistive memory device and a manufacturing method of the resistive memory device. The resistive memory device includes: a stack structure in which a plurality of interlayer insulating layers and a plurality of conductive layers are alternately stacked; a hole penetrating the stack structure in a vertical direction; and a gate insulating layer, a channel layer, and a variable resistance layer, formed along sidewalls of the plurality of conductive layers, which are adjacent to the hole, and sidewalls of the plurality of interlayer insulating layers, which are adjacent to the hole.
Claims9
A method of manufacturing a resistive memory device, the method comprising:
- forming a hole penetrating, in a vertical direction, a stack structure in which first material layers and second material layers are alternately stacked;
- forming recess regions by etching sidewalls of the first material layers, which is exposed through the hole, to a certain depth;
- and
- forming a gate insulating layer, a channel layer, and a variable resistance layer along a sidewall of the hole including the recess regions.
A method of manufacturing a resistive memory device, the method comprising:
- forming a hole penetrating, in a vertical direction, a stack structure in which first material layers and second material layers are alternately stacked;
- forming gate insulating layers on sidewalls of the second material layers, which are exposed through the hole;
- and
- forming a channel layer and a variable resistance layer along sidewalls of the first material layers, which are exposed through the hole, and sidewalls of the gate insulating layers.
Dependencies are inferred from the claim text.