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US 12,507,418 B2Granted
Semiconductor device and method for fabricating the same
AssigneeSK hynix Inc.
InventorJeong Hwan Song
Life of this patent
Estimating the term…
Abstract
A semiconductor device may include: a first conductive line; a second conductive line disposed over the first conductive line to be spaced apart from the first conductive line; a variable resistance layer disposed over the first conductive line and below the second conductive line; at least one of a first dielectric layer or a second dielectric layer; at least one of a first contact or a second contact; and at least one of a first doped selector layer or a second doped selector layer.
Claims19
A semiconductor device comprising:
- a first conductive line;
- a second conductive line disposed over the first conductive line to be spaced apart from the first conductive line;
- a variable resistance layer disposed over the first conductive line and below the second conductive line;
- at least one of a first dielectric layer or a second dielectric layer, wherein the first dielectric layer includes a first through-hole disposed between the first conductive line and the variable resistance layer and the second dielectric layer includes a second through-hole disposed between the variable resistance layer and the second conductive line;
- at least one of a first contact or a second contact, wherein the first contact is structured to include a conductive material filled with the first through-hole and includes a first contact portion and a second contact portion spaced apart from each other, and the second contact is structured to include a conductive material filled with the second through-hole, and includes a third contact portion and a fourth contact portion spaced apart from each other;
- and
- at least one of a first doped selector layer or a second doped selector layer, wherein the first doped selector layer includes a first selection element portion interposed between the first contact portion and the second contact portion and a second selection element portion disposed in the first dielectric layer to be spaced apart from an upper surface of the first dielectric layer and a lower surface of the first dielectric layer, and the second doped selector layer includes a third selection element portion interposed between the third contact portion and the fourth contact portion and a fourth selection element portion disposed in the second dielectric layer to be spaced apart from an upper surface of the second dielectric layer and a lower surface of the second dielectric layer.
4 more elements
A method for fabricating a semiconductor device comprising:
- forming a first conductive line over a substrate;
- forming a variable resistance layer over the first conductive line;
- forming a second conductive line over the variable resistance layer;
- forming a first dielectric layer including a through-hole between the first line and the variable resistance layer, between the variable resistance layer and the second conductive line, or both between the first line and the variable resistance layer and between the variable resistance layer and the second conductive line;
- forming a contact in the through-hole;
- performing a first ion implantation process to form a first sub dielectric layer within the contact and a second sub dielectric layer within the first dielectric layer such that the first sub dielectric layer is spaced apart from an upper surface and a lower surface of the contact and the second sub dielectric layer is spaced apart from an upper surface and a lower surface of the first dielectric layer by converting a portion of the contact into the first sub dielectric layer and a portion of the first dielectric layer into the second sub dielectric layer;
- and
- performing a second ion implantation of a dopant into the first sub dielectric layer and the second sub dielectric layer to form a doped selector layer,
- wherein the doped selector layer includes a first portion including the first sub dielectric layer and the dopant and a second portion including the second sub dielectric layer and the dopant.
6 more elements
Dependencies are inferred from the claim text.