H10D 86/215
Comprising finfets
Official title: {comprising FinFETs}
H10D86/215 (Comprising finfets) appears on 2,440 US grants and 2,542 published applications in this corpus.
Search patents in H10D- Granted patents
- 2,440
- Published applications
- 2,542
- Assignees
- 192
- Inventors
- 2,146
- Latest grant
- 6 Oct 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1994 | 1 | 0 |
| 1995 | 1 | 0 |
| 1996 | 0 | 0 |
| 1997 | 1 | 0 |
| 1998 | 0 | 0 |
| 1999 | 0 | 0 |
| 2000 | 0 | 0 |
| 2001 | 0 | 1 |
| 2002 | 2 | 0 |
| 2003 | 2 | 4 |
| 2004 | 3 | 7 |
| 2005 | 10 | 24 |
| 2006 | 12 | 27 |
| 2007 | 24 | 47 |
| 2008 | 21 | 38 |
| 2009 | 29 | 38 |
| 2010 | 30 | 28 |
| 2011 | 36 | 52 |
| 2012 | 41 | 57 |
| 2013 | 71 | 125 |
| 2014 | 118 | 186 |
| 2015 | 195 | 284 |
| 2016 | 318 | 312 |
| 2017 | 339 | 322 |
| 2018 | 275 | 228 |
| 2019 | 241 | 195 |
| 2020 | 191 | 184 |
| 2021 | 147 | 109 |
| 2022 | 101 | 81 |
| 2023 | 85 | 78 |
| 2024 | 69 | 51 |
| 2025 | 56 | 46 |
| 2026 | 21 | 18 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
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- Leakage reduction methods and structures thereof21 Jul 2026US 12,690,260 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Semiconductor structure having dielectric structure extending into second cavity of semiconductor fin14 Jul 2026US 12,684,798 B2Taiwan Semiconductor Manufacturing Company.Ltd
- CMOS structure, and fabrication methods of FinFET CMOS, FD CMOS and GAA CMOS23 Jun 2026US 12,666,716 B2Xidian University
- Method of forming semiconductor device23 Jun 2026US 12,666,932 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Integrated circuit device and method of manufacturing the same8 Oct 2026US 2026/0313948 A1Samsung Electronics Co., Ltd.
- Gate etch back with reduced loading effect10 Sep 2026US 2026/0271372 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Light detection device, method for manufacturing the same, and electronic device3 Sep 2026US 2026/0262286 A1Sony Semiconductor Solutions Corporation
- Semiconductor device and methods of formation13 Aug 2026US 2026/0239740 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Semiconductor structure and related methods6 Aug 2026US 2026/0231527 A1Taiwan Semiconductor Manufacturing Company.Ltd
Most cited
By later US patents
- Cut-mask patterning process for fin-like field effect transistor (FinFET) device3,286US 9,236,267 B2Taiwan Semiconductor Manufacturing Company.Ltd · 2016
- FinFET devices with unique fin shape and the fabrication thereof1,337US 9,548,303 B2Taiwan Semiconductor Manufacturing Company.Ltd · 2017
- Nanowire field effect transistor device having a replacement gate849US 9,472,618 B2Taiwan Semiconductor Manufacturing Company.Ltd · 2016
- Finfet transistor structures having a double gate channel extending vertically from a substrate and methods of manufacture600US 6,413,802 B1The Regents of the University of California · 2002
- Strained channel integrated circuit devices569US 8,729,627 B2Taiwan Semiconductor Manufacturing Company.Ltd · 2014