H10D 86/201
The substrates comprising an insulating layer on a semiconductor body
Official title: {the substrates comprising an insulating layer on a semiconductor body, e.g. SOI (H10D86/40 take precedence)}
H10D86/201 (The substrates comprising an insulating layer on a semiconductor body) appears on 8,736 US grants and 8,847 published applications in this corpus.
Search patents in H10D- Granted patents
- 8,736
- Published applications
- 8,847
- Assignees
- 824
- Inventors
- 7,701
- Latest grant
- 6 Oct 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1980 | 1 | 0 |
| 1981 | 1 | 0 |
| 1982 | 0 | 0 |
| 1983 | 0 | 0 |
| 1984 | 0 | 0 |
| 1985 | 2 | 0 |
| 1986 | 4 | 0 |
| 1987 | 1 | 0 |
| 1988 | 2 | 0 |
| 1989 | 3 | 0 |
| 1990 | 6 | 0 |
| 1991 | 13 | 0 |
| 1992 | 13 | 0 |
| 1993 | 9 | 0 |
| 1994 | 19 | 0 |
| 1995 | 40 | 0 |
| 1996 | 41 | 0 |
| 1997 | 58 | 0 |
| 1998 | 73 | 0 |
| 1999 | 96 | 0 |
| 2000 | 107 | 0 |
| 2001 | 155 | 57 |
| 2002 | 189 | 228 |
| 2003 | 232 | 228 |
| 2004 | 187 | 262 |
| 2005 | 239 | 353 |
| 2006 | 238 | 384 |
| 2007 | 269 | 426 |
| 2008 | 264 | 389 |
| 2009 | 252 | 323 |
| 2010 | 340 | 240 |
| 2011 | 276 | 290 |
| 2012 | 261 | 323 |
| 2013 | 347 | 388 |
| 2014 | 406 | 453 |
| 2015 | 490 | 563 |
| 2016 | 587 | 560 |
| 2017 | 655 | 597 |
| 2018 | 551 | 548 |
| 2019 | 528 | 445 |
| 2020 | 450 | 414 |
| 2021 | 335 | 291 |
| 2022 | 256 | 281 |
| 2023 | 231 | 269 |
| 2024 | 224 | 223 |
| 2025 | 182 | 200 |
| 2026 | 103 | 112 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Subgroups
Granted patents
Recent patents
- MOSFET and memory cell having improved drain current through back bias application6 Oct 2026US 12,757,460 B2Zeno Semiconductor, Inc.
- Cross field effect transistor library cell architecture design6 Oct 2026US 12,757,486 B2Advanced Micro Devices, Inc.
- Semiconductor structure and fabrication method thereof6 Oct 2026US 12,757,691 B2United Microelectronics Corp.
- Lateral bipolar junction transistor device and method of forming same29 Sep 2026US 12,747,993 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Composite substrate, manufacturing method thereof and semiconductor device22 Sep 2026US 12,745,456 B2Enkris Semiconductor (Wuxi), Ltd.
- Integrated circuit device and method of manufacturing the same8 Oct 2026US 2026/0313948 A1Samsung Electronics Co., Ltd.
- Semiconductor device8 Oct 2026US 2026/0314068 A1Vanguard International Semiconductor Corporation
- Transistor structures with interleaved body contacts and gate contacts1 Oct 2026US 2026/0304873 A1GLOBALFOUNDRIES U. S. Inc.
- Monolithic microwave integrated circuit1 Oct 2026US 2026/0304907 A1Qorvo US, Inc.
- Silicon-on-insulator substrate including trap-rich layer and methods for making thereof1 Oct 2026US 2026/0305272 A1
Most cited
By later US patents
- Cut-mask patterning process for fin-like field effect transistor (FinFET) device3,286US 9,236,267 B2Taiwan Semiconductor Manufacturing Company.Ltd · 2016
- FinFET devices with unique fin shape and the fabrication thereof1,337US 9,548,303 B2Taiwan Semiconductor Manufacturing Company.Ltd · 2017
- Nanowire field effect transistor device having a replacement gate849US 9,472,618 B2Taiwan Semiconductor Manufacturing Company.Ltd · 2016
- Finfet transistor structures having a double gate channel extending vertically from a substrate and methods of manufacture600US 6,413,802 B1The Regents of the University of California · 2002
- Integrated circuit and method for its manufacture597US 6,972,478 B1Advanced Micro Devices, Inc. · 2005