H10D 84/988
Four or more levels of metal
Official title: {Four or more levels of metal}
H10D84/988 (Four or more levels of metal) appears on 160 US grants and 122 published applications in this corpus.
Search patents in H10D- Granted patents
- 160
- Published applications
- 122
- Assignees
- 13
- Inventors
- 79
- Latest grant
- 26 May 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 2007 | 0 | 1 |
| 2008 | 1 | 0 |
| 2009 | 0 | 4 |
| 2010 | 1 | 58 |
| 2011 | 19 | 4 |
| 2012 | 42 | 0 |
| 2013 | 3 | 10 |
| 2014 | 6 | 1 |
| 2015 | 2 | 3 |
| 2016 | 3 | 3 |
| 2017 | 19 | 8 |
| 2018 | 19 | 7 |
| 2019 | 20 | 6 |
| 2020 | 5 | 3 |
| 2021 | 10 | 4 |
| 2022 | 2 | 2 |
| 2023 | 4 | 3 |
| 2024 | 2 | 2 |
| 2025 | 1 | 1 |
| 2026 | 1 | 2 |
By publication year. 2026 runs to 8 Oct.
Recent patents
- Semiconductor device including power mesh26 May 2026US 12,642,074 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Integrated circuit and method of forming same15 Jul 2025US 12,364,006 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Interconnect structure for logic circuit9 Apr 2024US 11,955,425 B2Taiwan Semiconducotr Manufacturing Company, Ltd.
- Method for routing local interconnect structure at same level as reference metal line27 Feb 2024US 11,916,077 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Methods of designing and fabricating a semiconductor device based on determining a least common multiple between select layout pitches26 Dec 2023US 11,854,976 B2Samsung Electronics Co., Ltd.
- Semiconductor device including power mesh20 Aug 2026US 2026/0247943 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Integrated circuit, system and method of forming the same2 Apr 2026US 2026/0096210 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Track stealing for standard cell height compaction4 Dec 2025US 2025/0374670 A1QUALCOMM Incorporated
- Integrated circuit and method of forming same28 Nov 2024US 2024/0395821 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Local interconnect structure13 Jun 2024US 2024/0194682 A1Tiawan Semiconductor Manufacturing Co., Ltd.
Most cited
By later US patents
- Dynamic array architecture227US 7,446,352 B2Tela Innovations, Inc. · 2008
- Integrated circuit having gate electrode level region including at least four linear-shaped conductive structures with some outer-contacted linear-shaped conductive structures having larger outer extending portion than inner extending portion159US 8,134,184 B2Tela Innovations, Inc. · 2012
- Methods for defining dynamic array section with manufacturing assurance halo and apparatus implementing the same152US 7,888,705 B2Tela Innovations, Inc. · 2011
- Semiconductor device with dynamic array section148US 7,917,879 B2Tela Innovations, Inc. · 2011
- Dynamic array architecture142US 7,842,975 B2Tela Innovations, Inc. · 2010