H10D 84/983
Levels of metallisation
Official title: {Levels of metallisation}
H10D84/983 (Levels of metallisation) appears on 326 US grants and 295 published applications in this corpus.
Search patents in H10D- Granted patents
- 326
- Published applications
- 295
- Assignees
- 37
- Inventors
- 218
- Latest grant
- 25 Aug 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 2007 | 0 | 1 |
| 2008 | 1 | 0 |
| 2009 | 0 | 5 |
| 2010 | 1 | 88 |
| 2011 | 21 | 4 |
| 2012 | 46 | 3 |
| 2013 | 17 | 23 |
| 2014 | 29 | 9 |
| 2015 | 10 | 7 |
| 2016 | 11 | 12 |
| 2017 | 36 | 20 |
| 2018 | 34 | 20 |
| 2019 | 32 | 17 |
| 2020 | 17 | 14 |
| 2021 | 19 | 16 |
| 2022 | 11 | 14 |
| 2023 | 9 | 9 |
| 2024 | 14 | 17 |
| 2025 | 10 | 10 |
| 2026 | 8 | 6 |
By publication year. 2026 runs to 8 Oct.
Subgroups
Granted patents
Recent patents
- VTFET circuit with optimized MOL25 Aug 2026US 12,720,860 B2International Business Machines Corporation
- Bioinformatics systems, apparatuses, and methods executed on an integrated circuit processing platform30 Jun 2026US 12,670,971 B2Illumina, Inc.
- Genomic infrastructure for on-site or cloud-based DNA and RNA processing and analysis23 Jun 2026US 12,665,053 B2Illumina, Inc.
- Integrated circuit device and method of forming the same26 May 2026US 12,641,875 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Semiconductor device including power mesh26 May 2026US 12,642,074 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Semiconductor device including power mesh20 Aug 2026US 2026/0247943 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Integrated circuit4 Jun 2026US 2026/0156934 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Genomic infrastructure for on-site or cloud-based dna and rna processing and analysis7 May 2026US 2026/0128127 A1Illumina, Inc.
- Cell region having vg-contact-free and vd-contact-free tracks and method of manufacturing same2 Apr 2026US 2026/0096208 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Integrated circuit, system and method of forming the same2 Apr 2026US 2026/0096210 A1Taiwan Semiconductor Manufacturing Company.Ltd
Most cited
By later US patents
- Dynamic array architecture227US 7,446,352 B2Tela Innovations, Inc. · 2008
- Integrated circuit having gate electrode level region including at least four linear-shaped conductive structures with some outer-contacted linear-shaped conductive structures having larger outer extending portion than inner extending portion159US 8,134,184 B2Tela Innovations, Inc. · 2012
- Methods for defining dynamic array section with manufacturing assurance halo and apparatus implementing the same152US 7,888,705 B2Tela Innovations, Inc. · 2011
- Semiconductor device with dynamic array section148US 7,917,879 B2Tela Innovations, Inc. · 2011
- Dynamic array architecture142US 7,842,975 B2Tela Innovations, Inc. · 2010