Dynamic array architecture

A semiconductor device, comprising:

• a substrate portion;
• a plurality of diffusion regions defined within the substrate portion so as to be physically separated from each other;
• and
• a gate electrode layer defined above the substrate portion to include only a plurality of linear gate electrode layer segments defined to extend over the substrate portion in a single common direction, wherein one or more portions of some of the plurality of linear gate electrode layer segments form a corresponding gate electrode of a corresponding transistor device associated with some of the plurality of diffusion regions,
• wherein each of the plurality of linear gate electrode layer segments is defined along a corresponding linear gate electrode track that extends across the substrate portion in the single common direction, and wherein some of the linear gate electrode tracks each have multiple linear gate electrode layer segments defined thereon, wherein linear gate electrode layer segments positioned end-to-end along a given linear gate electrode track are separated by a line end spacing;
• and
• a plurality of gate electrode contacts defined to electrically connect with some of the plurality of linear gate electrode layer segments, wherein no more than one gate electrode contact is placed proximate to any given line end spacing that separates multiple linear gate electrode layer segments along a same linear gate electrode track.

A semiconductor device, comprising:

• a substrate portion;
• a plurality of diffusion regions defined within the substrate portion so as to be physically separated from each other, wherein one or more of the plurality of diffusion regions is defined to have a periphery formed by more than four orthogonally related sides;
• and
• a gate electrode layer defined above the substrate portion to include only a plurality of linear gate electrode layer segments defined to extend over the substrate portion in a single common direction, wherein one or more portions of some of the plurality of linear gate electrode layer segments form a corresponding gate electrode of a corresponding transistor device associated with some of the plurality of diffusion regions,
• wherein at least one of the plurality of linear gate electrode layer segments does not include a portion that forms a gate electrode of a transistor device.