Semiconductor device including power mesh
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsWEI-AN LAI, WEI-CHENG LIN, JIANN-TYNG TZENG
Life of this patent
Estimating the term…
Loading patent…
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsWEI-AN LAI, WEI-CHENG LIN, JIANN-TYNG TZENG
Estimating the term…
A semiconductor device includes a base having a first surface, source and drain electrodes and gate electrodes arranged on the first surface of the base, wherein the gate electrodes are extended along a first direction; a power mesh arranged below the first surface of the base and comprising first power rails and second power rails, wherein the first power rails are separated from each other in the first direction and extend along a second direction, the second power rails are separated from each other in the second direction and extend along the first direction; first vias for coupling the first power rails to the second power rails substantially perpendicular to the first surface of the base; and signal tracks arranged above the first surface of the base and coupled to the gate electrodes through second vias that are arranged on gate electrodes in row along the second direction.
A semiconductor device, comprising:
A semiconductor device, comprising:
A semiconductor device, comprising:
Dependencies are inferred from the claim text.