H10D 84/035
Using silicon carbide [sic] technology
Official title: {using silicon carbide [SiC] technology}
H10D84/035 (Using silicon carbide [sic] technology) appears on 289 US grants and 305 published applications in this corpus.
Search patents in H10D- Granted patents
- 289
- Published applications
- 305
- Assignees
- 113
- Inventors
- 480
- Latest grant
- 14 Apr 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1991 | 2 | 0 |
| 1992 | 0 | 0 |
| 1993 | 1 | 0 |
| 1994 | 0 | 0 |
| 1995 | 2 | 0 |
| 1996 | 2 | 0 |
| 1997 | 0 | 0 |
| 1998 | 4 | 0 |
| 1999 | 1 | 0 |
| 2000 | 3 | 0 |
| 2001 | 3 | 0 |
| 2002 | 2 | 4 |
| 2003 | 4 | 5 |
| 2004 | 4 | 8 |
| 2005 | 6 | 5 |
| 2006 | 3 | 9 |
| 2007 | 6 | 13 |
| 2008 | 5 | 5 |
| 2009 | 4 | 7 |
| 2010 | 8 | 13 |
| 2011 | 10 | 15 |
| 2012 | 16 | 16 |
| 2013 | 15 | 23 |
| 2014 | 20 | 17 |
| 2015 | 18 | 17 |
| 2016 | 19 | 15 |
| 2017 | 22 | 19 |
| 2018 | 14 | 21 |
| 2019 | 18 | 21 |
| 2020 | 24 | 17 |
| 2021 | 14 | 9 |
| 2022 | 8 | 9 |
| 2023 | 11 | 11 |
| 2024 | 9 | 9 |
| 2025 | 7 | 8 |
| 2026 | 4 | 9 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
- Silicon carbide power device with integrated resistance and corresponding manufacturing process14 Apr 2026US 12,604,516 B2STMicroelectronics S,r.l.
- Wafer-level die singulation using buried sacrificial structure10 Feb 2026US 12,550,414 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Fabrication of silicon carbide integrated power MOSFETs on a single substrate13 Jan 2026US 12,527,055 B2CoolCAD Electronics, LLC
- Wafer processing method and device chip manufacturing method13 Jan 2026US 12,527,067 B2Disco Corporation
- Semiconductor devices having on-chip gate resistors14 Oct 2025US 12,446,300 B2Wolfspeed, Inc.
- Sic p-channel mos fet and sic complementary mos device23 Jul 2026US 2026/0214930 A1Kyoto University
- Semiconductor device with a plurality of replication units and with a plurality of resistors and method for manufacturing23 Jul 2026US 2026/0215258 A1Infineon Technologies Austria AG
- Wafer-level die singulation using buried sacrificial structure18 Jun 2026US 2026/0173500 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Semiconductor device and integrated circuit30 Apr 2026US 2026/0121596 A1Hitachi, Ltd.
- Isolation structure for n epitaxy-based silicon carbide device, and n epitaxy-based silicon carbide high and low voltage integrated device and preparation method therefor30 Apr 2026US 2026/0123035 A1Southeast University
Most cited
By later US patents
- Non-volatile random access memory cell constructed of silicon carbide141US 5,510,630 AWestinghouse Electric Corp. · 1996
- Semiconductor device and method for manufacturing same126US 7,507,999 B2Panasonic Corporation · 2009
- Method for manufacturing silicon carbide semiconductor device94US 6,096,607 AFuji Electric Co., Ltd. · 2000
- Silicon carbide CMOS devices91US 6,344,663 B12002
- Silicon device on Si:C-OI and SGOI and method of manufacture89US 7,247,534 B2International Business Machines Corporation · 2007