H10D 84/02
Characterised by using material-based technologies
Official title: characterised by using material-based technologies
H10D84/02 (Characterised by using material-based technologies) appears on 37,547 US grants and 41,237 published applications in this corpus.
Search patents in H10D- Granted patents
- 37,547
- Published applications
- 41,237
- Assignees
- 2,074
- Inventors
- 28,204
- Latest grant
- 6 Oct 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 33 | 0 |
| 1977 | 42 | 0 |
| 1978 | 38 | 0 |
| 1979 | 32 | 0 |
| 1980 | 29 | 0 |
| 1981 | 38 | 0 |
| 1982 | 31 | 0 |
| 1983 | 39 | 0 |
| 1984 | 47 | 0 |
| 1985 | 54 | 0 |
| 1986 | 62 | 0 |
| 1987 | 79 | 0 |
| 1988 | 94 | 0 |
| 1989 | 106 | 0 |
| 1990 | 112 | 0 |
| 1991 | 144 | 0 |
| 1992 | 150 | 0 |
| 1993 | 138 | 0 |
| 1994 | 163 | 0 |
| 1995 | 159 | 0 |
| 1996 | 195 | 0 |
| 1997 | 202 | 0 |
| 1998 | 286 | 0 |
| 1999 | 379 | 0 |
| 2000 | 492 | 0 |
| 2001 | 515 | 201 |
| 2002 | 565 | 649 |
| 2003 | 603 | 668 |
| 2004 | 597 | 795 |
| 2005 | 560 | 1004 |
| 2006 | 660 | 1135 |
| 2007 | 645 | 1201 |
| 2008 | 701 | 1332 |
| 2009 | 764 | 1120 |
| 2010 | 1048 | 1055 |
| 2011 | 1046 | 1016 |
| 2012 | 921 | 1106 |
| 2013 | 1129 | 1244 |
| 2014 | 1333 | 1389 |
| 2015 | 1514 | 1832 |
| 2016 | 1963 | 2032 |
| 2017 | 2159 | 2129 |
| 2018 | 2128 | 2100 |
| 2019 | 2252 | 2242 |
| 2020 | 2287 | 2741 |
| 2021 | 1961 | 2287 |
| 2022 | 1868 | 2632 |
| 2023 | 1868 | 2777 |
| 2024 | 2069 | 2842 |
| 2025 | 2081 | 2494 |
| 2026 | 1166 | 1214 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Subgroups
Granted patents
Recent patents
- Semiconductor device having an asymmetric fin-type patterns formed between two symmetric fin-type patterns with varying width along center vertical line of the fins6 Oct 2026US 12,757,368 B2Samsung Electronics Co., Ltd.
- 3D semiconductor device and method of forming the same6 Oct 2026US 12,757,391 B2Tokyo Electron Limited
- Semiconductor device and manufacturing method thereof6 Oct 2026US 12,757,432 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Semiconductor device structure with butted-contact and methods of forming the same6 Oct 2026US 12,757,433 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Semiconductor structure and method for forming the same6 Oct 2026US 12,757,440 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Integrated circuit and method of forming the same8 Oct 2026US 2026/0312572 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Physically unclonable function (puf) generation8 Oct 2026US 2026/0312831 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Flash memory with improved gate structure and a method of creating the same8 Oct 2026US 2026/0313891 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Semiconductor structure8 Oct 2026US 2026/0313931 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Controlled doping in a gate dielectric layer8 Oct 2026US 2026/0313932 A1Taiwan Semiconductor Manufacturing Company.Ltd
Most cited
By later US patents
- Method of cutting metal gate3,322US 9,520,482 B1Taiwan Semiconductor Manufacturing Company.Ltd · 2016
- FINFETs with wrap-around silicide and method forming the same1,436US 9,608,116 B2Taiwan Semiconductor Manufacturing Company.Ltd · 2017
- FinFET devices with unique fin shape and the fabrication thereof1,337US 9,548,303 B2Taiwan Semiconductor Manufacturing Company.Ltd · 2017
- Structure and method for FinFET integrated with capacitor1,331US 8,860,148 B2Taiwan Semiconductor Manufacturing Company.Ltd · 2014
- System and methods for converting planar design to FinFET design1,326US 8,816,444 B2Taiwan Semiconductor Manufacturing Company.Ltd · 2014