H10D 84/03
Using group iv technology
Official title: using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
H10D84/03 (Using group iv technology) appears on 35,912 US grants and 39,461 published applications in this corpus.
Search patents in H10D- Granted patents
- 35,912
- Published applications
- 39,461
- Assignees
- 1,892
- Inventors
- 26,365
- Latest grant
- 6 Oct 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 33 | 0 |
| 1977 | 41 | 0 |
| 1978 | 37 | 0 |
| 1979 | 32 | 0 |
| 1980 | 29 | 0 |
| 1981 | 37 | 0 |
| 1982 | 29 | 0 |
| 1983 | 38 | 0 |
| 1984 | 44 | 0 |
| 1985 | 50 | 0 |
| 1986 | 54 | 0 |
| 1987 | 68 | 0 |
| 1988 | 77 | 0 |
| 1989 | 84 | 0 |
| 1990 | 94 | 0 |
| 1991 | 118 | 0 |
| 1992 | 123 | 0 |
| 1993 | 109 | 0 |
| 1994 | 130 | 0 |
| 1995 | 132 | 0 |
| 1996 | 172 | 0 |
| 1997 | 189 | 0 |
| 1998 | 269 | 0 |
| 1999 | 365 | 0 |
| 2000 | 479 | 0 |
| 2001 | 505 | 194 |
| 2002 | 552 | 608 |
| 2003 | 587 | 597 |
| 2004 | 579 | 772 |
| 2005 | 540 | 984 |
| 2006 | 645 | 1102 |
| 2007 | 637 | 1180 |
| 2008 | 684 | 1289 |
| 2009 | 743 | 1098 |
| 2010 | 1018 | 1021 |
| 2011 | 1014 | 958 |
| 2012 | 883 | 1051 |
| 2013 | 1088 | 1173 |
| 2014 | 1263 | 1310 |
| 2015 | 1437 | 1740 |
| 2016 | 1872 | 1911 |
| 2017 | 2061 | 2022 |
| 2018 | 2043 | 2026 |
| 2019 | 2164 | 2161 |
| 2020 | 2203 | 2622 |
| 2021 | 1884 | 2209 |
| 2022 | 1797 | 2511 |
| 2023 | 1795 | 2671 |
| 2024 | 1972 | 2727 |
| 2025 | 1983 | 2379 |
| 2026 | 1130 | 1145 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Subgroups
Granted patents
Recent patents
- Semiconductor device having an asymmetric fin-type patterns formed between two symmetric fin-type patterns with varying width along center vertical line of the fins6 Oct 2026US 12,757,368 B2Samsung Electronics Co., Ltd.
- 3D semiconductor device and method of forming the same6 Oct 2026US 12,757,391 B2Tokyo Electron Limited
- Semiconductor device and manufacturing method thereof6 Oct 2026US 12,757,432 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Semiconductor device structure with butted-contact and methods of forming the same6 Oct 2026US 12,757,433 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Semiconductor structure and method for forming the same6 Oct 2026US 12,757,440 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Integrated circuit and method of forming the same8 Oct 2026US 2026/0312572 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Physically unclonable function (puf) generation8 Oct 2026US 2026/0312831 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Flash memory with improved gate structure and a method of creating the same8 Oct 2026US 2026/0313891 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Semiconductor structure8 Oct 2026US 2026/0313931 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Controlled doping in a gate dielectric layer8 Oct 2026US 2026/0313932 A1Taiwan Semiconductor Manufacturing Company.Ltd
Most cited
By later US patents
- Method of cutting metal gate3,322US 9,520,482 B1Taiwan Semiconductor Manufacturing Company.Ltd · 2016
- FINFETs with wrap-around silicide and method forming the same1,436US 9,608,116 B2Taiwan Semiconductor Manufacturing Company.Ltd · 2017
- FinFET devices with unique fin shape and the fabrication thereof1,337US 9,548,303 B2Taiwan Semiconductor Manufacturing Company.Ltd · 2017
- Structure and method for FinFET integrated with capacitor1,331US 8,860,148 B2Taiwan Semiconductor Manufacturing Company.Ltd · 2014
- System and methods for converting planar design to FinFET design1,326US 8,816,444 B2Taiwan Semiconductor Manufacturing Company.Ltd · 2014