H10D 84/07
Using group ii-vi technology
Official title: using Group II-VI technology
H10D84/07 (Using group ii-vi technology) appears on 34 US grants and 30 published applications in this corpus.
Search patents in H10D- Granted patents
- 34
- Published applications
- 30
- Assignees
- 26
- Inventors
- 72
- Latest grant
- 30 Jun 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1990 | 1 | 0 |
| 1991 | 1 | 0 |
| 1992 | 1 | 0 |
| 1993 | 2 | 0 |
| 1994 | 0 | 0 |
| 1995 | 0 | 0 |
| 1996 | 0 | 0 |
| 1997 | 2 | 0 |
| 1998 | 0 | 0 |
| 1999 | 0 | 0 |
| 2000 | 0 | 0 |
| 2001 | 1 | 0 |
| 2002 | 0 | 0 |
| 2003 | 0 | 0 |
| 2004 | 0 | 0 |
| 2005 | 0 | 1 |
| 2006 | 1 | 0 |
| 2007 | 0 | 0 |
| 2008 | 0 | 0 |
| 2009 | 0 | 1 |
| 2010 | 0 | 1 |
| 2011 | 0 | 1 |
| 2012 | 2 | 2 |
| 2013 | 0 | 2 |
| 2014 | 2 | 2 |
| 2015 | 3 | 2 |
| 2016 | 3 | 4 |
| 2017 | 0 | 0 |
| 2018 | 1 | 3 |
| 2019 | 3 | 3 |
| 2020 | 2 | 0 |
| 2021 | 2 | 4 |
| 2022 | 1 | 1 |
| 2023 | 3 | 1 |
| 2024 | 2 | 1 |
| 2025 | 0 | 1 |
| 2026 | 1 | 0 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
- Electronic package having a chip with a trench in the surface30 Jun 2026US 12,672,553 B2Siliconware Precision Industries Co., Ltd.
- Superlattice structure including two-dimensional material and device including the superlattice structure9 Jul 2024US 12,034,049 B2Center for Technology Licensing at Cornell University
- Electronic devices comprising memory cells comprising channel materials23 Jan 2024US 11,882,685 B2Micron Technology, Inc.
- Methods and apparatuses for depositing amorphous silicon atop metal oxide9 May 2023US 11,646,237 B2APPLIED Materials.Inc.
- Superlattice structure including two-dimensional material and device including the superlattice structure7 Feb 2023US 11,575,011 B2Center for Technology Licensing at Cornell University
- Method including under-etching an ion-induced damage layer to facilitate separation of a substrate film layer from an underlying substrate bulk region23 Oct 2025US 2025/0329543 A1Microchip Technology Incorporated
- Electronic package and manufacturing method thereof31 Oct 2024US 2024/0363545 A1Siliconware Precision Industries Co., Ltd.
- Superlattice structure including two-dimensional material and device including the superlattice structure7 Dec 2023US 2023/0395665 A1Center for Technology Licensing at Cornell University
- Superlattice structure including two-dimensional material and device including the superlattice structure7 Apr 2022US 2022/0109051 A1Center for Technology Licensing at Cornell University
- Semiconductor devices comprising memory cells comprising channel materials23 Sep 2021US 2021/0296320 A1Micron Technology, Inc.
Most cited
By later US patents
- Semiconductor device including a superlattice with regions defining a semiconductor junction116US 7,045,813 B2RJ Mears, LLC · 2006
- Semiconductor device having first and second stacked semiconductor layers, with electrical contact to the first semiconductor layer58US 5,701,019 AHitachi, Ltd. · 1997
- Memory cells, semiconductor devices, systems including such cells, and methods of fabrication51US 9,177,872 B2Micron Technology, Inc. · 2015
- Method of making monolithic integrated III-V type laser devices and silicon devices on silicon30US 4,940,672 AKopin Corporation · 1990
- Method of forming crystal array24US 5,064,771 AGrumman Aerospace Corporation · 1991