Semiconductor device including a superlattice with regions defining a semiconductor junction
AssigneeRJ Mears, LLC
InventorsRobert J. Mears, Robert John Stephenson
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Abstract
A semiconductor device may include a superlattice comprising a plurality of stacked groups of layers. Each group of layers of the superlattice may include a plurality of stacked base silicon monolayers defining a base silicon portion and an energy band-modifying layer thereon. The energy band-modifying layer may include at least one non-semiconductor monolayer constrained within a crystal lattice of adjacent base semiconductor portions. The superlattice may further include at least one pair of oppositely-doped regions therein defining at least one semiconductor junction.
Claims20
A semiconductor device comprising:
- a superlattice comprising a plurality of stacked groups of layers;
- each group of layers of said superlattice comprising a plurality of stacked base silicon monolayers defining a base silicon portion and an energy band-modifying layer thereon;
- said energy band-modifying layer comprising at least one non-semiconductor monolayer constrained within a crystal lattice of adjacent base silicon portions;
- and
- said superlattice comprising at least one pair of oppositely-doped regions therein defining at least one semiconductor junction.
A semiconductor device comprising:
- a superlattice comprising a plurality of stacked groups of layers;
- each group of layers of said superlattice comprising a plurality of stacked base silicon monolayers defining a base silicon portion and an energy band-modifying layer thereon;
- said energy band-modifying layer comprising at least one oxygen monolayer constrained within a crystal lattice of adjacent base silicon portions;
- and
- said superlattice comprising at least one pair of oppositely-doped regions therein in direct contact with one another and defining at least one semiconductor junction.
Dependencies are inferred from the claim text.