Semiconductor devices comprising memory cells comprising channel materials

A semiconductor device, comprising:

• memory cells, one or more of the memory cells comprising:
• a transistor comprising:
• a channel material comprising an indium gallium zinc oxide material, the channel material between a source region and a drain region;
• and
• an insulative material surrounding the channel material;
• and
• a capacitor in operative communication with the transistor, the capacitor comprising:
• a capacitor electrode directly contacting the channel material and the insulative material, and the capacitor electrode oriented perpendicular to the channel material.

A semiconductor device, comprising:

• memory arrays comprising memory cells, one or more of the memory cells of the memory arrays comprising:
• a transistor comprising:
• a channel material comprising an indium gallium zinc oxide material between a source region and a drain region;
• and
• an insulative material directly adjacent to the channel material, upper surfaces of the insulative material and the channel material substantially coplanar with one another;
• and
• a capacitor in operative communication with the transistor, the capacitor comprising:
• a capacitor electrode directly contacting the channel material and the insulative material.