Method of making monolithic integrated III-V type laser devices and silicon devices on silicon
AssigneeKopin Corporation
InventorPaul M. Zavracky
Life of this patent
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Abstract
A monolithic integrated structure in which a compound semiconductor (III-V or II-VI material) optoelectronic device (laser) is formed in the shape of a mesa-like structure projecting from an etch pit in an Si substrate. A method for sonically removing cantilevered beams formed on said optoelectronic device, to provide laser end facets, is also described.
Claims27
A method of fabricating compound semiconductor devices of III-V or II-VI material on a semiconductor substrate comprising the steps of:
- (a) forming layers of said compound semiconductor over selected regions of the substrate to form said optoelectronic compound semiconductor devices with one of said layers being a light emitting layer;
- (b) forming contact metallization on said devices;
- (c) removing regions of the substrate adjacent to and underlying portions of the compound semiconductor devices leaving the compound semiconductor devices isolated from the substrate on lateral sides with two cantilevered beam sections of compound semiconductor devices extending in opposite directions;
- and
- (d) separating the cantilevered sections from the compound scmiconductor devices to provide end facets for the compound semiconductor devices.
A method of fabricating compound semiconductor devices of III-V or II-VI material and semiconductor devices of silicon on a common substrate comprising the steps of:
- (a) forming Si electronic devices on selected areas of said substrate;
- (b) forming a mask layer over the Si devices and the selected regions;
- (c) forming openings through said mask layer to expose said selected regions;
- (d) forming layers of said compound semi-conductor over at least the exposed selected regions which layers are single crystalline and form optoelectronic compound semiconductor devices with a lasing layer;
- (e) forming contact metallization on said devices;
- (f) removing regions of silicon adjacent and underlying portions of the compound semiconductor devices leaving the compound semiconductor devices isolated from silicon on lateral sides with two cantilevered beam sections of compound semiconductor devices extending in opposite directions;
- and
- (g) separating the cantilevered sections from the compound semiconductor devices to provide end facets for the compound semiconductor devices.
A method of fabricating optical semiconductor devices of gallium arsenide and electronic semiconductor devices of silicon on a common substrate surface comprising the steps of:
- (b) forming silicon devices on selected regions of said surface;
- (c) forming a mask layer over said silicon devices and adjacent regions of said substrate;
- (d) forming openings through said mask layer to expose at least a portion of said adjacent regions;
- (e) forming gallium arsenide optical semiconductor devices in said openings;
- (f) forming contact metallization to said Si devices and GaAs devices;
- (g) isolating the GaAs devices by removing silicon from lateral sides of the GaAs devices and beneath two sides of the GaAs devices to form a main body leaving cantilevered beams of GaAs material extending from said body in opposite directions;
- and
- (h) removing said beams where they join the main body of the GaAs devices to form end facets for the GaAs devices.
The method of fabricating compound semiconductor devices of III-V or II-VI material and semiconductor devices of silicon on a common substrate with metallized interconnections between the compound semiconductor devices and the silicon devices comprising the steps of:
- (a) forming Si devices on selected areas of a planar surface of said substrate;
- (b) forming a mask layer over the Si devices and adjacent regions;
- (c) forming openings through said mask layer to expose said adjacent regions;
- (d) forming compound semiconductor devices in said openings;
- (e) forming metal interconnections between said Si devices and said compound semiconductor devices;
- (f) removing Si material from all lateral sides and beneath opposite sides of said compound semiconductor devices to leave compound semiconductor material beams extending on opposite sides of said compound semiconductor devices;
- and
- (g) removing said beams to form end facets for said compound semiconductor devices.
Dependencies are inferred from the claim text.