Methods and apparatuses for depositing amorphous silicon atop metal oxide
AssigneeApplied Materials, Inc.
InventorsDong Kil Yim, Jose-Ignacio Del-Agua Borniquel
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Abstract
In some embodiments, a method of processing a substrate disposed atop a substrate support in a physical vapor deposition process chamber includes: (a) forming a plasma from a process gas within a processing region of the physical vapor deposition chamber, wherein the process gas comprises an inert gas to sputter silicon from a surface of a target within the processing region of the physical vapor deposition chamber; and (b) depositing an amorphous silicon layer atop a first layer on the substrate, wherein the first layer comprises one or more metal oxides of indium (In), gallium (Ga), zinc (Zn), tin (Sn) or combinations thereof.
Claims23
A method of processing a substrate disposed atop a substrate support in a physical vapor deposition process chamber comprising:
- (a) forming a plasma from a process gas within a processing region of the physical vapor deposition process chamber, wherein the process gas comprises an inert gas to sputter silicon from a surface of a target within the processing region of the physical vapor deposition process chamber;
- and
- (b) depositing an amorphous silicon layer atop a first layer on the substrate, wherein the first layer comprises one or more metal oxides of indium (In), gallium (Ga), zinc (Zn), tin (Sn), or combinations thereof.
A method of processing a substrate disposed atop a substrate support in a physical vapor deposition chamber, comprising:
- (a) depositing a layer of indium gallium zinc oxide (IGZO) material atop a substrate;
- (b) contacting the layer of indium gallium zinc oxide (IGZO) material with a plasma from a process gas within a processing region of the physical vapor deposition chamber, wherein the process gas comprises an inert gas devoid of hydrogen containing gas to sputter source material from a surface of a target within the processing region of the physical vapor deposition chamber;
- and
- (c) depositing, via physical vapor deposition (PVD), an amorphous silicon layer atop the layer of indium gallium zinc oxide (IGZO) material to a thickness sufficient to reduce or eliminate hydrogen contact with the indium gallium zinc oxide (IGZO) material.
A method of passivating oxygen vacancy formation within amorphous indium gallium zinc oxide, comprising:
- depositing an amorphous indium gallium zinc oxide layer atop a gate dielectric layer;
- and
- depositing, via physical vapor deposition (PVD), an amorphous silicon layer atop the indium gallium zinc oxide (IGZO) material to a thickness sufficient to reduce or eliminate hydrogen contact with the indium gallium zinc oxide (IGZO) material to reduce or eliminate formation of oxygen vacancies.
Dependencies are inferred from the claim text.