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US 2026/0214930 A1Published application
Sic p-channel mos fet and sic complementary mos device
AssigneeKyoto University
InventorsTsunenobu KIMOTO, Kyota MIKAMI
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Abstract
A SiC p-channel MOSFET includes a SiC substrate 10 whose surface plane orientation is (0001), and a fin portion 100 protruding perpendicularly to the surface of the SiC substrate and made of SiC. The fin portion has a source region 30, a drain region 40, and a channel region 50 sandwiched between the source region and the drain region, a gate electrode 70 is formed through a gate oxidation film 60 over the side surfaces and upper surface of the channel region, and the side surface of the channel region 50 is a (1-100) plane.
Claims5
A SiC p-channel MOSFET comprising:
- a SiC substrate whose surface plane orientation is (0001);
- and
- a fin portion protruding perpendicularly to a surface of the SiC substrate and made of SiC,
- wherein the fin portion has a source region, a drain region, and a channel region sandwiched between the source region and the drain region,
- a gate electrode is formed through a gate oxidation film over side and upper surfaces of the channel region, and
- the side surface of the channel region is a (1-100) plane.
3 more elements
Dependencies are inferred from the claim text.