Silicon carbide power device with integrated resistance and corresponding manufacturing process
AssigneeSTMicroelectronics S.r.l.
InventorsMario Giuseppe Saggio, Alfio Guarnera
Life of this patent
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Abstract
A silicon carbide power device has: a die having a functional layer of silicon carbide and an edge area and an active area, surrounded by the edge area; gate structures formed on a top surface of the functional layer in the active area; and a gate contact pad for biasing the gate structures. The device also has an integrated resistor having a doped region, of a first conductivity type, arranged at the front surface of the functional layer in the edge area; wherein the integrated resistor defines an insulated resistance in the functional layer, interposed between the gate structures and the gate contact pad.
Claims18
A silicon carbide power device, comprising:
- a silicon carbide layer, including an edge area and an active area surrounded by the edge area;
- a gate structure formed on a first surface of the silicon carbide layer in the active area;
- a resistor including a first doped region of a first conductivity type arranged at the first surface of the silicon carbide layer in the edge area;
- a gate contact pad configured to bias the gate structure, wherein the resistor is positioned between the gate contact pad and the gate structure, wherein the gate contact pad is arranged at the edge area and electrically contacts a first end of the first doped region through a first contact region;
- a gate metallization in electrical contact with the gate structure in the active area, the gate metallization in contact with a second end of the first doped region through a second contact region;
- an outer dielectric region arranged on the first surface of the silicon carbide layer, at the edge area;
- and
- an opening vertically through the outer dielectric region, wherein the first and the second contact regions are arranged in the opening, and the first and the second contact regions are electrically separated from one another.
A silicon carbide power device, comprising:
- a silicon carbide layer, including an active area and an edge area peripheral to the active area;
- a transistor in the active area, the transistor including a gate structure on a first surface of the silicon carbide layer in the active area;
- a resistor in the edge area, the resistor including a first doped region of a first conductivity type adjacent to the first surface of the silicon carbide layer;
- a gate contact pad, the resistor coupled between the gate contact pad and the gate structure, wherein the gate contact pad is arranged at the edge area and electrically contacts a first end of the first doped region through a first contact region;
- a gate metallization in electrical contact with the gate structure in the active area, the gate metallization in contact with a second end of the first doped region through a second contact region;
- and
- an edge-termination region in the edge area, the edge-termination region including a second doped region having a second conductivity type and a first doping level, in proximity to the first surface of the silicon carbide layer, wherein the first doped region is confined within an insulated well having the second conductivity type and a second doping level, higher than the first doping level, the insulated well within the edge-termination region.
A silicon carbide power device, comprising:
- a silicon carbide layer, the silicon carbide layer including an edge area and an active area surrounded by the edge area;
- a plurality of gate structures on a first surface of the silicon carbide layer in the active area;
- a gate contact pad configured to bias the gate structures;
- a resistor including a doped region of a first conductivity type at the first surface of the silicon carbide layer in the edge area and between the gate contact pad and the gate structures;
- body wells having a second conductivity type and a first doping level within the silicon carbide layer in the active area;
- and
- source regions having the first conductivity type within the body wells, and below respective gate structures, wherein the doped region are formed within an insulated well having dopants of the second conductivity type.
Dependencies are inferred from the claim text.