Semiconductor device with a plurality of replication units and with a plurality of resistors and method for manufacturing
AssigneeInfineon Technologies Austria AG
InventorsMarkus SEEBACHER, Thomas LEITNER
Life of this patent
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Abstract
Embodiments comprise a semiconductor device comprising: a gate node a drain node a source node and a gate bus, wherein the gate bus is connected to the gate node, a source structure and a drain structure, wherein the source structure is coupled to the source node and wherein the drain structure is coupled to the drain node, a plurality of replication units, wherein a respective replication unit of the plurality of replication units comprises a gate finger; wherein the gate fingers, the source structure and the drain structure are arranged to form a transistor structure, and a plurality of resistors, wherein each resistor connects one of the gate fingers to the gate bus.
Claims17
A semiconductor device comprising:
- a gate node, a drain node, a source node and a gate bus, wherein the gate bus is connected to the gate node,
- a source structure and a drain structure, wherein the source structure is coupled to the source node and wherein the drain structure is coupled to the drain node,
- a plurality of replication units,
- wherein a respective replication unit of the plurality of replication units comprises a gate finger;
- wherein the gate fingers, the source structure and the drain structure are arranged to form a transistor structure, and
- a plurality of resistors,
- wherein each resistor connects a respective one of the gate fingers to the gate bus.
A method for manufacturing a semiconductor device, the method comprising:
- providing a gate node, a drain node, a source node, a gate bus, a source structure and a drain structure;
- connecting the gate bus to the gate node,
- coupling the source structure to the source node and coupling the drain structure to the drain node,
- providing a plurality of replication units,
- wherein a respective replication unit of the plurality of replication units comprises a gate finger;
- wherein the gate fingers, the source structure and the drain structure are arranged to form a transistor structure, and
- providing a plurality of resistors,
- wherein each resistor connects one of the gate fingers to the gate bus.
Dependencies are inferred from the claim text.