H10D 84/0181
Manufacturing their gate insulating layers
Official title: {Manufacturing their gate insulating layers}
H10D84/0181 (Manufacturing their gate insulating layers) appears on 2,005 US grants and 2,415 published applications in this corpus.
Search patents in H10D- Granted patents
- 2,005
- Published applications
- 2,415
- Assignees
- 278
- Inventors
- 2,958
- Latest grant
- 22 Sep 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1979 | 1 | 0 |
| 1980 | 1 | 0 |
| 1981 | 0 | 0 |
| 1982 | 0 | 0 |
| 1983 | 0 | 0 |
| 1984 | 0 | 0 |
| 1985 | 0 | 0 |
| 1986 | 2 | 0 |
| 1987 | 2 | 0 |
| 1988 | 0 | 0 |
| 1989 | 3 | 0 |
| 1990 | 0 | 0 |
| 1991 | 2 | 0 |
| 1992 | 1 | 0 |
| 1993 | 2 | 0 |
| 1994 | 5 | 0 |
| 1995 | 3 | 0 |
| 1996 | 4 | 0 |
| 1997 | 6 | 0 |
| 1998 | 3 | 0 |
| 1999 | 8 | 0 |
| 2000 | 13 | 0 |
| 2001 | 24 | 13 |
| 2002 | 23 | 44 |
| 2003 | 46 | 56 |
| 2004 | 55 | 77 |
| 2005 | 46 | 96 |
| 2006 | 56 | 128 |
| 2007 | 74 | 122 |
| 2008 | 69 | 82 |
| 2009 | 72 | 102 |
| 2010 | 84 | 110 |
| 2011 | 110 | 111 |
| 2012 | 85 | 114 |
| 2013 | 111 | 105 |
| 2014 | 119 | 101 |
| 2015 | 106 | 105 |
| 2016 | 105 | 82 |
| 2017 | 74 | 78 |
| 2018 | 61 | 41 |
| 2019 | 83 | 106 |
| 2020 | 88 | 100 |
| 2021 | 78 | 103 |
| 2022 | 80 | 109 |
| 2023 | 77 | 122 |
| 2024 | 93 | 109 |
| 2025 | 88 | 122 |
| 2026 | 42 | 77 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
- Gate structures in semiconductor devices22 Sep 2026US 12,745,440 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Semiconductor structure and method for manufacturing the same22 Sep 2026US 12,745,448 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Volumeless threshold voltage tuning for stacked device structures15 Sep 2026US 12,740,133 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Semiconductor device having high-k gate dielectric layers15 Sep 2026US 12,740,140 B2SK hynix Inc.
- Controlled doping in a gate dielectric layer1 Sep 2026US 12,727,186 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Controlled doping in a gate dielectric layer8 Oct 2026US 2026/0313932 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Volumeless Threshold Voltage Tuning for Stacked Device Structures8 Oct 2026US 2026/0314031 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Semiconductor structure and method for manufacturing the same8 Oct 2026US 2026/0314035 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Gate structures in semiconductor devices1 Oct 2026US 2026/0304880 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Fabrication of gate-all-around integrated circuit structures having gate dielectrics with subtractively differentiated transition layer thickness1 Oct 2026US 2026/0304937 A1Intel Corporation
Most cited
By later US patents
- Precursor source mixtures666US 6,984,591 B1International Business Machines Corporation · 2006
- Atomic layer deposition of Zrx Hfy Sn1-x-y O2 films as high k gate dielectrics580US 7,393,736 B2Micron Technology, Inc. · 2008
- Semiconductor devices with varying threshold voltage and fabrication methods thereof487US 9,748,145 B1Globalfoundries Inc. · 2017
- Semiconductor device and method of manufacturing the same372US 6,737,716 B1Kabushiki Kaisha Toshiba · 2004
- CMOS device with dual-epi channels and self-aligned contacts132US 7,598,142 B22009