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US 7,598,142 B2Granted
CMOS device with dual-epi channels and self-aligned contacts
OwnerPushkar Ranade, Keith E. Zawadzkiinventors
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Abstract
A CMOS device having dual-epi channels comprises a first epitaxial region formed on a substrate, a PMOS device formed on the first epitaxial region, a second epitaxial region formed on the substrate, wherein the second epitaxial region is formed from a different material than the first epitaxial region, an NMOS device formed on the second epitaxial region, and electrical contacts coupled to the PMOS and NMOS devices, wherein the electrical contacts are self-aligned.
Claims7
A method comprising:
- epitaxially depositing a silicon germanium epi region on a substrate;
- epitaxially depositing a carbon doped silicon epi region on the substrate;
- forming an isolation structure on the substrate between the silicon germanium epi region and the carbon doped silicon epi region;
- forming a first set of spacers on the silicon germanium epi region;
- forming a second set of spacers on the carbon doped silicon epi region;
- forming a first high-k gate dielectric layer in a trench between the first set of spacers on the silicon germanium epi region;
- depositing a first metal gate electrode atop the first high-k gate dielectric layer;
- depositing a second high-k gate dielectric layer in a trench between the second set of spacers on the carbon doped silicon epi region;
- depositing a second metal gate electrode atop the second high-k gate dielectric layer;
- implanting ions within the silicon germanium epi region to form a first source region and a first drain region;
- implanting ions within the carbon doped silicon epi region to form a second source region and a second drain region;
- and
- forming electrical contacts to the first and second source regions and to the first and second drain regions.
10 more elements
Dependencies are inferred from the claim text.