Atomic layer deposition of Zrx Hfy Sn1-x-y O2 films as high k gate dielectrics

A method comprising:

• forming a substantially planar nanolaminate dielectric layer including at least zirconium oxide, hafnium oxide and tin oxide on a surface of a substrate by atomic layer deposition;
• and
• forming a metal layer on the planar nanolaminate dielectric layer;
• wherein the zirconium oxide layer is formed with a first precursor selected from the list including tetrakis diethyl amino zirconium, zirconium tetrachloride, zirconium tetraiodide, zirconium tertiary-butyloxide and zirconium nitride.

A method comprising:

• forming a substantially planar nanolaminate dielectric layer including a plurality of alternating layers of at least zirconium oxide, hafnium oxide and tin oxide on a surface of a substrate by atomic layer deposition;
• and
• forming a metal layer on the planar nanolaminate dielectric layer;
• wherein each of the alternating layers is formed of a selected number of atomic layer deposition cycles to obtain a desired ratio of zirconium to hafnium, and of zirconium to tin in the planar nanolaminate dielectric layer.

A method comprising:

• forming a substantially planar nanolaminate dielectric layer including at least zirconium oxide, hafnium oxide and tin oxide on a surface of a substrate by atomic layer deposition;
• and
• forming a metal layer on the planar nanolaminate dielectric layer;
• wherein the planar nanolaminate dielectric layer is formed by:
• forming a first portion of the planar nanolaminate dielectric layer, including exposing an activated substrate surface at a preselected temperature to a first precursor material for a preselected first time period and a preselected flow volume of the first precursor material to saturate the substrate surface with the first precursor material;
• exposing the substrate surface to a preselected volume of a first purge material for a preselected second time period to remove substantially all of a non-absorbed portion of the first precursor material from the substrate surface;
• exposing the substrate surface to a preselected volume of a first reactant material for a preselected third time period to react with the absorbed portion of the first precursor material on the substrate surface to form a first dielectric material having a first thickness;
• exposing the substrate surface to a preselected volume of a second purge material for a preselected fourth time period to remove substantially all of a non-reacted portion of the first reactant material, and a first plurality of gaseous reaction byproducts from the substrate surface;
• repeating the first portion forming until a first portion thickness reaches a predetermined first final value;
• forming a second portion of the planar nanolaminate dielectric layer, including exposing the substrate surface to a second precursor material for a preselected fifth time period and a preselected flow volume of the second precursor material to saturate the substrate surface with the second precursor material;
• exposing the substrate surface to a preselected volume of a third purge material for a preselected sixth time period to remove substantially all of a non-absorbed portion of the second precursor material from the substrate surface;
• exposing the substrate surface to a preselected volume of a second reactant material for a preselected seventh time period to react with the absorbed portion of the second precursor material on the substrate surface to form a second dielectric material having a second thickness;
• exposing the substrate surface to a preselected volume of a fourth purge material for a preselected eighth time period to remove substantially all of a non-reacted portion of the second reactant material, and a second plurality of gaseous reaction byproducts from the substrate surface;
• repeating the second portion forming until a second portion thickness reaches a predetermined second final value;
• forming a third portion of the planar nanolaminate dielectric layer, including exposing the substrate surface to a third precursor material for a preselected ninth time period and a preselected flow volume of the third precursor material to saturate the substrate surface with the third precursor material;
• exposing the substrate surface to a preselected volume of a fifth purge material for a preselected tenth time period to remove substantially all of a non-absorbed portion of the third precursor material from the substrate surface;
• exposing the substrate surface to a preselected volume of a third reactant material for a preselected eleventh time period to react with the absorbed portion of the third precursor material on the substrate surface to form a third dielectric material having a third thickness;
• exposing the substrate surface to a preselected volume of a sixth purge material for a preselected twelfth time period to remove substantially all of a non-reacted portion of the third reactant material, and a third plurality of gaseous reaction byproducts from the substrate surface;
• repeating the third portion forming until a third portion thickness reaches a predetermined value;
• and
• repeating the first, second and third forming until a preselected final planar nanolaminate dielectric layer thickness is obtained.

A method, comprising:

• forming a memory array in a substrate including:
• forming at least one atomic layer deposition planar nanolaminate dielectric layer containing at least zirconium oxide, hafnium oxide and tin oxide in an integrated circuit wherein the planar nanolaminate dielectric layer is in contact with substantially all of a top surface of a substrate containing the integrated circuit;
• depositing a conductive layer contacting the planar nanolaminate dielectric layer;
• and
• forming an address decoder in the substrate, the address decoder coupled to the memory array.

A method comprising:

• providing a controller;
• coupling an integrated circuit to the controller, wherein the integrated circuit includes a substantially planar nanolaminate dielectric layer contacting a conductive layer, the dielectric comprising zirconium oxide, hafnium oxide and tin oxide, wherein forming the planar nanolaminate dielectric layer contacting the conductive layer includes:
• forming the planar nanolaminate dielectric layer by atomic layer deposition;
• and
• depositing the conductive layer such that the conductive layer contacts the planar nanolaminate dielectric layer.