Gate structures in semiconductor devices
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsShen-Yang LEE, Hsiang-Pi CHANG, Huang-Lin CHAO
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Abstract
A semiconductor device and a method of fabricating the semiconductor device are disclosed. The method includes forming nanostructured channel regions on a fin or sheet base, forming gate openings surrounding the nanostructured channel regions, forming oxide layers on exposed surfaces of the nanostructured channel regions and the fin or sheet base in the gate openings, performing a first doping process on the oxide layers to form doped oxide layers, depositing a first dielectric layer on the doped oxide layers, performing a second doping process on the first dielectric layer to form a doped dielectric layer, and depositing a conductive layer on the doped dielectric layer.
Claims20
A method, comprising:
- forming nanostructured channel regions on a base structure;
- forming oxide layers in contact with the nanostructured channel regions;
- performing a first doping process on the oxide layers to form doped oxide layers;
- depositing a first dielectric layer on the doped oxide layers;
- performing a second doping process on the first dielectric layer to form a doped dielectric layer;
- and
- depositing a conductive layer on the doped dielectric layer.
A method, comprising:
- forming first and second nanostructured channel regions on first and second base structures, respectively;
- forming a first oxide layer in contact with the first nanostructured channel region;
- forming a doped oxide layer in contact with the second nanostructured channel region;
- depositing a first dielectric layer with a first dielectric portion on the first oxide layer and a second dielectric portion on the doped oxide layer;
- performing a doping process on the first and second dielectric portions to form first and second doped dielectric portions, respectively;
- and
- depositing a conductive layer on the first and second doped dielectric portions.
A semiconductor device, comprising:
- a substrate;
- first and second nanostructured channel regions disposed on first and second base structures, respectively, on the substrate;
- a first gate structure, comprising:
- a undoped oxide layer surrounding and in contact with the first nanostructured channel region, and
- a first doped dielectric layer disposed on the undoped oxide layer;
- and
- a second gate structure, comprising:
- a doped oxide layer surrounding and in contact with the second nanostructured channel region;
- and
- a second doped dielectric layer disposed on the doped oxide layer.
Dependencies are inferred from the claim text.