H10D 64/033
Comprising ferroelectric layers
Official title: {comprising ferroelectric layers}
H10D64/033 (Comprising ferroelectric layers) appears on 894 US grants and 1,208 published applications in this corpus.
Search patents in H10D- Granted patents
- 894
- Published applications
- 1,208
- Assignees
- 204
- Inventors
- 1,367
- Latest grant
- 6 Oct 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1998 | 4 | 0 |
| 1999 | 6 | 0 |
| 2000 | 10 | 0 |
| 2001 | 10 | 10 |
| 2002 | 17 | 19 |
| 2003 | 17 | 30 |
| 2004 | 29 | 24 |
| 2005 | 15 | 24 |
| 2006 | 13 | 14 |
| 2007 | 18 | 19 |
| 2008 | 10 | 13 |
| 2009 | 7 | 16 |
| 2010 | 11 | 13 |
| 2011 | 8 | 11 |
| 2012 | 8 | 11 |
| 2013 | 12 | 7 |
| 2014 | 9 | 14 |
| 2015 | 11 | 16 |
| 2016 | 10 | 21 |
| 2017 | 19 | 22 |
| 2018 | 31 | 50 |
| 2019 | 51 | 71 |
| 2020 | 53 | 71 |
| 2021 | 63 | 114 |
| 2022 | 82 | 156 |
| 2023 | 106 | 148 |
| 2024 | 116 | 155 |
| 2025 | 105 | 113 |
| 2026 | 43 | 46 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
- Ferroelectric tunnel junction devices for low voltage and low temperature operation6 Oct 2026US 12,757,474 B2Intel Corporation
- Post CMOS compatible ferroelectric field effect transistor with AlScN dielectric and 2D material channel15 Sep 2026US 12,740,102 B2The Trustees of the University of Pennsylvania
- Semiconductor device15 Sep 2026US 12,740,400 B2Samsung Electronics Co., Ltd.
- Memory device25 Aug 2026US 12,720,758 B2Samsung Electronics Co., Ltd.
- Ferroelectric devices and methods of forming the same25 Aug 2026US 12,720,759 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Semiconductor device1 Oct 2026US 2026/0304847 A1SK hynix Inc.
- Ferroelectric memory devices having improved ferroelectric properties and methods of making the same24 Sep 2026US 2026/0293218 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Device structure with ferroelectric layer24 Sep 2026US 2026/0293549 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Semiconductor devices17 Sep 2026US 2026/0282375 A1Samsung Electronics Co., Ltd.
- Ferroelectric memory devices and operation methods thereof17 Sep 2026US 2026/0282376 A1Yangtze Memory Technologies Co., Ltd.
Most cited
By later US patents
- Formation of well-controlled thin SiO, SiN, SiON layer for multilayer high-K dielectric applications569US 6,682,973 B1Advanced Micro Devices, Inc. · 2004
- Method for making an electronic device including a poled superlattice having a net electrical dipole moment126US 7,517,702 B2Mears Technologies, Inc. · 2009
- Non-volatile memory cell having dual gate electrodes114US 5,751,037 ASony Corporation · 1998
- Floating trap non-volatile semiconductor memory devices including high dielectric constant blocking insulating layers106US 6,858,906 B2Samsung Electronics Co., Ltd. · 2005
- Ferroelectric field effect transistors for nonvolatile memory applications having functional gradient material101US 6,236,076 B1Matsushita Electronics Corporation · 2001