H10D 64/031
Of data-storage electrodes
Official title: {of data-storage electrodes}
H10D64/031 (Of data-storage electrodes) appears on 8,269 US grants and 9,055 published applications in this corpus.
Search patents in H10D- Granted patents
- 8,269
- Published applications
- 9,055
- Assignees
- 825
- Inventors
- 8,404
- Latest grant
- 6 Oct 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 3 | 0 |
| 1977 | 4 | 0 |
| 1978 | 2 | 0 |
| 1979 | 3 | 0 |
| 1980 | 4 | 0 |
| 1981 | 8 | 0 |
| 1982 | 2 | 0 |
| 1983 | 9 | 0 |
| 1984 | 6 | 0 |
| 1985 | 2 | 0 |
| 1986 | 3 | 0 |
| 1987 | 9 | 0 |
| 1988 | 14 | 0 |
| 1989 | 16 | 0 |
| 1990 | 12 | 0 |
| 1991 | 26 | 0 |
| 1992 | 28 | 0 |
| 1993 | 25 | 0 |
| 1994 | 16 | 0 |
| 1995 | 16 | 0 |
| 1996 | 14 | 0 |
| 1997 | 12 | 0 |
| 1998 | 27 | 0 |
| 1999 | 50 | 0 |
| 2000 | 100 | 0 |
| 2001 | 160 | 61 |
| 2002 | 176 | 194 |
| 2003 | 214 | 227 |
| 2004 | 248 | 333 |
| 2005 | 231 | 351 |
| 2006 | 264 | 431 |
| 2007 | 263 | 420 |
| 2008 | 229 | 469 |
| 2009 | 268 | 424 |
| 2010 | 339 | 339 |
| 2011 | 336 | 323 |
| 2012 | 302 | 266 |
| 2013 | 296 | 303 |
| 2014 | 340 | 365 |
| 2015 | 371 | 452 |
| 2016 | 466 | 425 |
| 2017 | 396 | 341 |
| 2018 | 351 | 343 |
| 2019 | 356 | 394 |
| 2020 | 397 | 492 |
| 2021 | 387 | 470 |
| 2022 | 336 | 481 |
| 2023 | 359 | 420 |
| 2024 | 336 | 338 |
| 2025 | 305 | 257 |
| 2026 | 132 | 136 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Subgroups
Granted patents
Recent patents
- Memory device with container-shaped electrode and method for fabricating the same6 Oct 2026US 12,757,372 B2Nanya Technology Corporation
- Method for fabricating memory device with container-shaped electrode6 Oct 2026US 12,757,373 B2Nanya Technology Corporation
- Ferroelectric tunnel junction devices for low voltage and low temperature operation6 Oct 2026US 12,757,474 B2Intel Corporation
- Post CMOS compatible ferroelectric field effect transistor with AlScN dielectric and 2D material channel15 Sep 2026US 12,740,102 B2The Trustees of the University of Pennsylvania
- Semiconductor device15 Sep 2026US 12,740,400 B2Samsung Electronics Co., Ltd.
- Flash memory with improved gate structure and a method of creating the same8 Oct 2026US 2026/0313891 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Lithography method using photo mask8 Oct 2026US 2026/0314343 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Semiconductor device and electronic system including the same1 Oct 2026US 2026/0304759 A1Samsung Electronics Co., Ltd.
- Semiconductor device1 Oct 2026US 2026/0304847 A1SK hynix Inc.
- Method for manufacturing non-volatile memory device24 Sep 2026US 2026/0293217 A1Iotmemory Technology Inc.
Most cited
By later US patents
- Two bit non-volatile electrically erasable and programmable semiconductor memory cell utilizing asymmetrical charge trapping1,211US 6,011,725 ASaifun Semiconductors Ltd. · 2000
- Lanthanide oxide / hafnium oxide dielectric layers627US 7,192,824 B2Micron Technology, Inc. · 2007
- Atomic layer deposited dielectric layers621US 7,192,892 B2Micron Technology, Inc. · 2007
- Lanthanide oxide / hafnium oxide dielectric layers601US 7,312,494 B2Micron Technology, Inc. · 2007
- Electronic apparatus with deposited dielectric layers586US 7,405,454 B2Micron Technology, Inc. · 2008