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US 12,720,758 B2Granted
Memory device
AssigneeSamsung Electronics Co., Ltd.
InventorsHyuncheol Kim, Yongseok Kim, Kiheun Lee, Daewon Ha
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Abstract
A memory device includes a channel region, a conductive electrode on the channel region, and a data storage structure between the channel region and the conductive electrode. The data storage structure includes a stack structure including two-dimensional material layers and ferroelectric layers stacked alternately and repeatedly in a direction perpendicular to a surface of the channel region. A thickness of each of the ferroelectric layers is greater than a thickness of each of the two-dimensional material layers.
Claims16
A memory device comprising:
- a channel region;
- a conductive electrode on the channel region;
- and
- a data storage structure between the channel region and the conductive electrode,
- wherein the data storage structure includes a stack structure including two-dimensional material layers and ferroelectric layers stacked alternately and repeatedly in a direction perpendicular to a surface of the channel region, each of the two-dimensional material layers including hexagonal boron nitride (h-BN), and
- wherein a thickness of each of the ferroelectric layers is greater than a thickness of each of the two-dimensional material layers.
3 more elements
A memory device comprising:
- a channel region;
- a conductive electrode facing the channel region;
- and
- a data storage structure between the channel region and the conductive electrode,
- wherein the data storage structure includes a stack structure including two-dimensional material layers and data storage layers stacked alternately and repeatedly in a direction perpendicular to a surface of the channel region,
- wherein a thickness of each of the data storage layers in the direction is greater than a thickness of each of the two-dimensional material layers in the direction, and
- wherein each of the two-dimensional material layers include hexagonal boron nitride (h-BN).
4 more elements
Dependencies are inferred from the claim text.