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AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsPo-Ting LIN, Song-Fu LIAO, Rainer, Yen-Chieh HUANG, Hai-Ching CHEN, Yu-Ming LIN, Chung-Te LIN
Estimating the term…
Ferroelectric devices, including FeFET and/or FeRAM devices, include ferroelectric material layers deposited using atomic layer deposition (ALD). By controlling parameters of the ALD deposition sequence, the crystal structure and ferroelectric properties of the ferroelectric layer may be engineered. An ALD deposition sequence including relatively shorter precursor pulse durations and purge durations between successive precursor pulses may provide a ferroelectric layer having relatively uniform crystal grain sizes and a small mean grain size (e.g., ≤ 3 nm), which may provide effective ferroelectric performance. An ALD deposition sequence including relatively longer precursor pulse durations and purge durations between successive precursor pulses may provide a ferroelectric layer having less uniform crystal grain sizes and a larger mean grain size (e.g., ≥ 7 nm). Ferroelectric layers having larger mean grain sizes may exhibit enhanced crystallinity and a stabilized orthorhombic crystal phase, particularly in relatively thin layers (e.g., ≤ 15 nm in thickness).
A ferroelectric field effect transistor (FeFET) device, comprising:
A ferroelectric field effect transistor (FeFET) device, comprising:
A ferroelectric field effect transistor (FeFET) device, comprising:
Dependencies are inferred from the claim text.