H10D 64/01328
By defining the conductor using a sidewall spacer mask, a transformation under
Official title: {by defining the conductor using a sidewall spacer mask, a transformation under a mask or a plating at a sidewall}
H10D64/01328 (By defining the conductor using a sidewall spacer mask, a transformation under) appears on 264 US grants and 253 published applications in this corpus.
Search patents in H10D- Granted patents
- 264
- Published applications
- 253
- Assignees
- 75
- Inventors
- 526
- Latest grant
- 25 Aug 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1984 | 4 | 0 |
| 1985 | 1 | 0 |
| 1986 | 0 | 0 |
| 1987 | 1 | 0 |
| 1988 | 2 | 0 |
| 1989 | 2 | 0 |
| 1990 | 0 | 0 |
| 1991 | 1 | 0 |
| 1992 | 0 | 0 |
| 1993 | 1 | 0 |
| 1994 | 0 | 0 |
| 1995 | 1 | 0 |
| 1996 | 0 | 0 |
| 1997 | 2 | 0 |
| 1998 | 3 | 0 |
| 1999 | 3 | 0 |
| 2000 | 8 | 0 |
| 2001 | 8 | 1 |
| 2002 | 4 | 1 |
| 2003 | 3 | 3 |
| 2004 | 1 | 2 |
| 2005 | 2 | 2 |
| 2006 | 4 | 9 |
| 2007 | 4 | 5 |
| 2008 | 4 | 8 |
| 2009 | 4 | 7 |
| 2010 | 6 | 8 |
| 2011 | 7 | 11 |
| 2012 | 7 | 9 |
| 2013 | 11 | 9 |
| 2014 | 10 | 20 |
| 2015 | 17 | 27 |
| 2016 | 25 | 17 |
| 2017 | 20 | 18 |
| 2018 | 15 | 21 |
| 2019 | 12 | 15 |
| 2020 | 25 | 14 |
| 2021 | 8 | 15 |
| 2022 | 15 | 11 |
| 2023 | 8 | 6 |
| 2024 | 6 | 6 |
| 2025 | 7 | 5 |
| 2026 | 2 | 3 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
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- Structure having gate spacers with projecting portions extending into a gate dielectric14 Oct 2025US 12,444,608 B2Taiwan Semiconductor Manufacturing Company.Ltd
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- Method for manufacturing semi-floating gate transistor2 Jul 2026US 2026/0190412 A1Shanghai Huali Integrated Circuit Corporation
- Method for manufacturing semiconductor structure11 Jun 2026US 2026/0165042 A1Nanya Technology Corporation
- Semiconductor device and method of manufacturing semiconductor device26 Feb 2026US 2026/0059836 A1SK hynix Inc.
- Methods of forming semiconductor devices20 Nov 2025US 2025/0357128 A1Taiwan Semiconductor Manufacturing Company.Ltd
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Most cited
By later US patents
- Formation of self-aligned metal gate FETs using a benignant removable gate material during high temperature steps233US 5,391,510 AInternational Business Machines Corporation · 1995
- Formation of sidewall oxide layers by reactive oxygen ion etching to define submicron features205US 4,432,132 ABell Telephone Laboratories, Incorporated · 1984
- Method for forming quadruple density sidewall image transfer (SIT) structures204US 6,875,703 B1International Business Machines Corporation · 2005
- Formation of variable-width sidewall structures193US 4,776,922 AInternational Business Machines Corporation · 1988
- Method for forming a semiconductor device191US 6,362,057 B1Motorola, Inc. · 2002