Method for manufacturing gate including boy part and protruding part and gate structure

A method for manufacturing a semiconductor structure, comprising:

• providing an activated region;
• forming an initial gate located on the activated region;
• forming a first mask layer on a top surface of the initial gate, wherein a first opening penetrating the first mask layer is provided in the first mask layer, and the first opening at least has opposite two sides extending along a first direction, the first mask layer further comprises second openings, the second openings are located on opposite two sides of the first opening along a second direction and are communicated with the first opening;
• forming sidewall layers located on sidewalls of the two sides of the first opening extending along the first direction and the sidewall layers located on sidewalls of the second openings in a same process;
• removing the first mask layer;
• patterning the initial gate to form gates, each gate comprises a body part and a protruding part, wherein the body part is formed by the sidewall layers of the two sides of the first opening as a mask, and the protruding part is formed with the sidewall layers of the sidewalls of the second openings as a mask.