H10D 62/86
Being group ii-vi materials
Official title: being Group II-VI materials, e.g. ZnO
H10D62/86 (Being group ii-vi materials) appears on 579 US grants and 639 published applications in this corpus.
Search patents in H10D- Granted patents
- 579
- Published applications
- 639
- Assignees
- 260
- Inventors
- 1,291
- Latest grant
- 28 Jul 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 4 | 0 |
| 1977 | 2 | 0 |
| 1978 | 9 | 0 |
| 1979 | 2 | 0 |
| 1980 | 0 | 0 |
| 1981 | 1 | 0 |
| 1982 | 1 | 0 |
| 1983 | 2 | 0 |
| 1984 | 2 | 0 |
| 1985 | 1 | 0 |
| 1986 | 4 | 0 |
| 1987 | 3 | 0 |
| 1988 | 3 | 0 |
| 1989 | 0 | 0 |
| 1990 | 0 | 0 |
| 1991 | 2 | 0 |
| 1992 | 1 | 0 |
| 1993 | 2 | 0 |
| 1994 | 0 | 0 |
| 1995 | 1 | 0 |
| 1996 | 2 | 0 |
| 1997 | 2 | 0 |
| 1998 | 6 | 0 |
| 1999 | 0 | 0 |
| 2000 | 0 | 0 |
| 2001 | 3 | 0 |
| 2002 | 4 | 4 |
| 2003 | 5 | 4 |
| 2004 | 3 | 12 |
| 2005 | 2 | 9 |
| 2006 | 6 | 12 |
| 2007 | 8 | 18 |
| 2008 | 5 | 20 |
| 2009 | 12 | 20 |
| 2010 | 17 | 27 |
| 2011 | 19 | 31 |
| 2012 | 27 | 26 |
| 2013 | 27 | 37 |
| 2014 | 36 | 47 |
| 2015 | 36 | 39 |
| 2016 | 41 | 57 |
| 2017 | 42 | 55 |
| 2018 | 50 | 31 |
| 2019 | 28 | 41 |
| 2020 | 28 | 38 |
| 2021 | 41 | 32 |
| 2022 | 22 | 19 |
| 2023 | 24 | 22 |
| 2024 | 23 | 14 |
| 2025 | 12 | 17 |
| 2026 | 8 | 7 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Subgroups
Granted patents
Recent patents
- Seeded growth for 2D nanoribbon transistors28 Jul 2026US 12,696,501 B2Intel Corporation
- Method for manufacturing tellurium-based semiconductor device, tellurium-based semiconductor device manufactured thereby, and thin film transistor23 Jun 2026US 12,666,655 B2Iucf-Hyu (Industry-University Cooperation Foundation Hanyang University)
- Semiconductor device7 Apr 2026US 12,597,448 B2Semiconductor Energy Laboratory Co.Ltd.
- Transistor10 Mar 2026US 12,575,136 B2Samsung Electronics Co., Ltd.
- Semiconductor device with a fin-shaped active region and an gate electrode24 Feb 2026US 12,563,769 B2Samsung Electronics Co., Ltd.
- Semiconductor device and manufacturing method thereof1 Oct 2026US 2026/0304843 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Semiconductor device16 Jul 2026US 2026/0206274 A1Semiconductor Energy Laboratory Co.Ltd.
- Semiconductor device with a fin-shaped active region and a gate electrode14 May 2026US 2026/0136584 A1Samsung Electronics Co., Ltd.
- Composite oxide semiconductor and transistor26 Mar 2026US 2026/0090030 A1Semiconductor Energy Laboratory Co.Ltd.
- Semiconductor device and method of fabricating the same5 Mar 2026US 2026/0068271 A1Samsung Electronics Co., Ltd.
Most cited
By later US patents
- Transistor and semiconductor device4,015US 6,727,522 B1Japan Science and Technology Corporation · 2004
- Transistor and semiconductor device3,984US 7,064,346 B2Japan Science and Technology Agency · 2006
- Method for forming ZnO film, method for forming ZnO semiconductor layer, method for fabricating semiconductor device, and semiconductor device3,939US 7,049,190 B2Sanyo Electric Co., Ltd. · 2006
- High-electron mobility transistor with zinc oxide3,938US 7,105,868 B2Cermet, Inc. · 2006
- Sulfur-containing thin films479US 9,245,742 B2ASM IP Holding B. V. · 2016