H10D 62/862
Being group ii-vi materials comprising three or more elements
Official title: being Group II-VI materials comprising three or more elements, e.g. CdZnTe
H10D62/862 (Being group ii-vi materials comprising three or more elements) appears on 75 US grants and 68 published applications in this corpus.
Search patents in H10D- Granted patents
- 75
- Published applications
- 68
- Assignees
- 42
- Inventors
- 191
- Latest grant
- 7 Apr 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 3 | 0 |
| 1977 | 1 | 0 |
| 1978 | 4 | 0 |
| 1979 | 1 | 0 |
| 1980 | 0 | 0 |
| 1981 | 0 | 0 |
| 1982 | 0 | 0 |
| 1983 | 1 | 0 |
| 1984 | 2 | 0 |
| 1985 | 0 | 0 |
| 1986 | 2 | 0 |
| 1987 | 3 | 0 |
| 1988 | 2 | 0 |
| 1989 | 0 | 0 |
| 1990 | 0 | 0 |
| 1991 | 0 | 0 |
| 1992 | 0 | 0 |
| 1993 | 0 | 0 |
| 1994 | 0 | 0 |
| 1995 | 1 | 0 |
| 1996 | 2 | 0 |
| 1997 | 1 | 0 |
| 1998 | 2 | 0 |
| 1999 | 0 | 0 |
| 2000 | 0 | 0 |
| 2001 | 1 | 0 |
| 2002 | 1 | 1 |
| 2003 | 1 | 0 |
| 2004 | 0 | 0 |
| 2005 | 0 | 0 |
| 2006 | 0 | 2 |
| 2007 | 1 | 0 |
| 2008 | 0 | 3 |
| 2009 | 0 | 1 |
| 2010 | 0 | 2 |
| 2011 | 0 | 3 |
| 2012 | 0 | 0 |
| 2013 | 0 | 4 |
| 2014 | 3 | 4 |
| 2015 | 3 | 4 |
| 2016 | 6 | 2 |
| 2017 | 1 | 5 |
| 2018 | 2 | 1 |
| 2019 | 4 | 7 |
| 2020 | 4 | 9 |
| 2021 | 8 | 6 |
| 2022 | 3 | 4 |
| 2023 | 6 | 4 |
| 2024 | 4 | 3 |
| 2025 | 1 | 2 |
| 2026 | 1 | 1 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
- Semiconductor device7 Apr 2026US 12,597,448 B2Semiconductor Energy Laboratory Co.Ltd.
- Transistor structures with a metal oxide contact buffer and a method of fabricating the transistor structures1 Jul 2025US 12,349,416 B2Intel Corporation
- Semiconductor device comprising silicon and oxide semiconductor in channel formation region3 Sep 2024US 12,080,802 B2Semiconductor Energy Laboratory Co.Ltd.
- Ferroelectric or anti-ferroelectric trench capacitor with spacers for sidewall strain engineering16 Jul 2024US 12,040,378 B2Intel Corporation
- Semiconductor device and manufacturing method thereof9 Jul 2024US 12,034,052 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Semiconductor device and method of fabricating the same5 Mar 2026US 2026/0068271 A1Samsung Electronics Co., Ltd.
- Simulation method for selecting optimal composition ratio of oxide semiconductor, and electronic device including the oxide semiconductor11 Dec 2025US 2025/0378228 A1Samsung Display Co., Ltd.
- Semiconductor device and method of manufacturing the same6 Feb 2025US 2025/0048662 A1Hyundai Motor Company
- Semiconductor device and manufacturing method thereof19 Dec 2024US 2024/0421231 A1Semiconductor Energy Laboratory Co.Ltd.
- Carrier modification devices for avoiding channel length reduction and methods for fabricating the same4 Jul 2024US 2024/0222519 A1Taiwan Semiconductor Manufacturing Company.Ltd
Most cited
By later US patents
- Semiconductor device91US 8,748,881 B2Semiconductor Energy Laboratory Co.Ltd. · 2014
- Semiconductor device87US 8,779,420 B2Semiconductor Energy Laboratory Co.Ltd. · 2014
- Semiconductor device73US 9,214,520 B2Semiconductor Energy Laboratory Co.Ltd. · 2015
- Method for polishing detector material59US 4,600,469 AHoneywell Inc. · 1986
- Switching circuit for a detector array49US 4,684,812 ATexas Instruments Incorporated · 1987