Ferroelectric or anti-ferroelectric trench capacitor with spacers for sidewall strain engineering

A system comprising:

• a processor circuitry to execute one or more instructions;
• a memory coupled to the processor circuitry, wherein the memory is to store the one or more instructions;
• and
• a communication interface to allow the processor circuitry to communicate with another device, wherein the memory comprises:
• an anti-ferroelectric material between a first electrode and a second electrode, wherein the anti-ferroelectric material forms a first surface at a first side of the anti-ferroelectric material, and a second surface at a second side of the anti-ferroelectric material, wherein the second side is opposite the first side, wherein the first electrode adjoins the anti-ferroelectric material at the first surface, wherein the second electrode adjoins the anti-ferroelectric material at the second surface, and wherein the anti-ferroelectric material has a tetragonal phase;
• a material adjacent to the first electrode, wherein the material extends along opposite sidewalls of the first electrode, wherein the material provides tensile stress to the anti-ferroelectric material, and wherein the material comprises metal, semimetal, or oxide;
• a first barrier structure adjacent to the first electrode;
• and
• a second barrier structure adjacent to the second electrode, wherein the first and second barrier structures comprise Ta and N.