Semiconductor device and method of manufacturing the same
AssigneesHyundai Motor Company, Kia Corporation, Industry Academy Cooperation Foundation of Sejong University
InventorsTaehyun Kim, Youngkyun Jung, You Seung Rim, Ji Young Min
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Abstract
An embodiment semiconductor device includes an n type layer disposed on a first surface of a substrate, the n type layer including beta-gallium oxide (ß-Ga2O3), a p type layer disposed on the n type layer and including nickel oxide represented by a formula MyNi1-yOx, wherein M is a doping element, x is 0.8≤x≤1.0, and y is 0≤y<1, a first electrode disposed on the p type layer, and a second electrode disposed on a second surface of the substrate opposite the first surface.
Claims20
A semiconductor device comprising:
- an n type layer disposed on a first surface of a substrate, the n type layer comprising beta-gallium oxide (ß-Ga2O3);
- a p type layer disposed on the n type layer and comprising nickel oxide represented by a formula MyNi1-yOx, wherein M is a doping element, x is 0.8≤x≤1.0, and y is 0≤y<1;
- a first electrode disposed on the p type layer;
- and
- a second electrode disposed on a second surface of the substrate opposite the first surface.
A method of manufacturing a semiconductor device, the method comprising:
- forming an n type layer comprising beta-gallium oxide (ß-Ga2O3) on a first surface of a substrate;
- forming a p type layer comprising nickel oxide represented by a formula MyNi1-yOx on the n type layer, wherein M is a doping element, x is 0.8≤x≤1.0, and y is 0≤y<1;
- forming a first electrode on the p type layer;
- and
- forming a second electrode on a second surface of the substrate opposite the first surface.
Dependencies are inferred from the claim text.