Semiconductor device

A semiconductor device comprising:

• a memory cell comprising:
• a transistor comprising a first gate and a second gate;
• and
• a capacitor electrically connected to one of a source and a drain of the transistor;
• a correction circuit;
• a voltage generation circuit;
• and
• a voltage holding circuit,
• wherein the first gate and the second gate overlap each other with a semiconductor layer therebetween,
• wherein the correction circuit is electrically connected to the second gate of the transistor,
• wherein an output terminal of the voltage generation circuit is electrically connected to an input terminal of the voltage holding circuit,
• wherein an output terminal of the voltage holding circuit is electrically connected to the second gate of the transistor,
• wherein the voltage holding circuit is configured to hold a voltage,
• wherein the correction circuit is configured to obtain a temperature information and to convert the temperature information into a control voltage, and
• wherein the control voltage controls the voltage generated by the voltage generation circuit.