Semiconductor device and method of fabricating the same

A method of fabricating a semiconductor device, the method comprising:

• alternately stacking a plurality of sacrificial layers and a plurality of semiconductor layers on a substrate;
• forming a dummy gate electrode structure on an uppermost semiconductor layer among the plurality of semiconductor layers that are stacked;
• selectively etching portions of the plurality of sacrificial layers and the plurality of semiconductor layers by using the dummy gate electrode structure to form a channel from the plurality of semiconductor layers;
• forming a first source/drain and a second source/drain at both ends of the channel on the substrate, respectively;
• selectively removing the plurality of sacrificial layers,
• forming a gate insulating layer and a gate electrode in regions at which the plurality of sacrificial layers that are selectively etched;
• forming a first conductive contact on the first source/drain and an alternating-current wiring line on the first conductive contact;
• and
• forming a second conductive contact on the second source/drain and a direct-current wiring line on the second conductive contact,
• wherein a first height defined as a height difference from a first surface of the gate electrode facing the alternating-current wiring line to a first surface of the first source/drain in contact with the first conductive contact is less than a second height defined as a height difference from a second surface of the gate electrode opposing the first surface of the gate electrode to a second surface of the first source/drain opposing the first surface of the first source/drain.