Semiconductor device
AssigneeSemiconductor Energy Laboratory Co., Ltd.
InventorShunpei Yamazaki
Life of this patent
Estimating the term…
Abstract
An embodiment is a semiconductor device which includes a first oxide semiconductor layer over a substrate having an insulating surface and including a crystalline region formed by growth from a surface of the first oxide semiconductor layer toward an inside; a second oxide semiconductor layer over the first oxide semiconductor layer; a source electrode layer and a drain electrode layer which are in contact with the second oxide semiconductor layer; a gate insulating layer covering the second oxide semiconductor layer, the source electrode layer, and the drain electrode layer; and a gate electrode layer over the gate insulating layer and in a region overlapping with the second oxide semiconductor layer. The second oxide semiconductor layer is a layer including a crystal formed by growth from the crystalline region.
Claims26
A semiconductor device comprising:
- a transistor comprising:
- a first gate;
- a first gate insulating film over the first gate;
- an oxide semiconductor film over the first gate insulating film;
- a second gate insulating film over the oxide semiconductor film;
- and
- a second gate over the second gate insulating film,
- wherein the oxide semiconductor film comprises indium and zinc,
- wherein the oxide semiconductor film comprises a crystalline region,
- wherein a c-axis of the crystalline region is aligned in a direction perpendicular or substantially perpendicular to a surface of the oxide semiconductor film,
- wherein the crystalline region comprises:
- a first layer comprising indium;
- and
- a second layer comprises gallium and does not comprise indium, and
- wherein the first layer and the second layer are stacked in a direction along the c-axis of the crystalline region.
A semiconductor device comprising:
- a transistor comprising:
- a gate;
- a gate insulating film over the gate;
- and
- an oxide semiconductor film over the gate insulating film;
- wherein the oxide semiconductor film comprises indium and zinc,
- wherein the oxide semiconductor film comprises a crystalline region,
- wherein a c-axis of the crystalline region is aligned in a direction perpendicular or substantially perpendicular to a surface of the oxide semiconductor film,
- wherein the crystalline region comprises:
- a first layer comprising indium;
- and
- a second layer comprises gallium and does not comprise indium, and
- wherein the first layer and the second layer are stacked in a direction along the c-axis of the crystalline region.
A semiconductor device comprising:
- a transistor comprising:
- an oxide semiconductor film;
- a gate insulating film over the oxide semiconductor film;
- and
- a gate over the gate insulating film,
- wherein the oxide semiconductor film comprises indium and zinc,
- wherein the oxide semiconductor film comprises a crystalline region,
- wherein a c-axis of the crystalline region is aligned in a direction perpendicular or substantially perpendicular to a surface of the oxide semiconductor film,
- wherein the crystalline region comprises:
- a first layer comprising indium;
- and
- a second layer comprises gallium and does not comprise indium, and
- wherein the first layer and the second layer are stacked in a direction along the c-axis of the crystalline region.
Dependencies are inferred from the claim text.