H10D 62/864
Further characterised by the dopants
Official title: further characterised by the dopants
H10D62/864 (Further characterised by the dopants) appears on 52 US grants and 55 published applications in this corpus.
Search patents in H10D- Granted patents
- 52
- Published applications
- 55
- Assignees
- 41
- Inventors
- 118
- Latest grant
- 23 Apr 2024
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1978 | 4 | 0 |
| 1979 | 0 | 0 |
| 1980 | 0 | 0 |
| 1981 | 1 | 0 |
| 1982 | 0 | 0 |
| 1983 | 1 | 0 |
| 1984 | 0 | 0 |
| 1985 | 1 | 0 |
| 1986 | 0 | 0 |
| 1987 | 0 | 0 |
| 1988 | 0 | 0 |
| 1989 | 0 | 0 |
| 1990 | 0 | 0 |
| 1991 | 0 | 0 |
| 1992 | 1 | 0 |
| 1993 | 1 | 0 |
| 1994 | 0 | 0 |
| 1995 | 0 | 0 |
| 1996 | 0 | 0 |
| 1997 | 0 | 0 |
| 1998 | 2 | 0 |
| 1999 | 0 | 0 |
| 2000 | 0 | 0 |
| 2001 | 1 | 0 |
| 2002 | 0 | 1 |
| 2003 | 1 | 2 |
| 2004 | 2 | 4 |
| 2005 | 0 | 0 |
| 2006 | 0 | 1 |
| 2007 | 2 | 3 |
| 2008 | 1 | 6 |
| 2009 | 4 | 0 |
| 2010 | 1 | 3 |
| 2011 | 0 | 1 |
| 2012 | 3 | 2 |
| 2013 | 1 | 4 |
| 2014 | 2 | 3 |
| 2015 | 3 | 3 |
| 2016 | 3 | 6 |
| 2017 | 6 | 8 |
| 2018 | 6 | 4 |
| 2019 | 1 | 2 |
| 2020 | 2 | 0 |
| 2021 | 0 | 1 |
| 2022 | 1 | 1 |
| 2023 | 0 | 0 |
| 2024 | 1 | 0 |
By publication year. Applications have been published since 2001.
Recent patents
- Crystalline oxide semiconductor film and semiconductor device23 Apr 2024US 11,967,618 B2Flosfia Inc.
- Crystalline oxide semiconductor film and semiconductor device19 Jul 2022US 11,393,906 B2Flosfia Inc.
- Source and drain formation using self-aligned processes21 Jan 2020US 10,541,135 B2International Business Machines Corporation
- Array substrate for thin-film transistor and display device of the same7 Jan 2020US 10,529,806 B2LG Display Co., Ltd.
- Hemt having heavily doped N-type regions and process of forming the same19 Feb 2019US 10,211,323 B2Sumitomo Electric Industries, Ltd.
- Crystalline oxide semiconductor film and semiconductor device22 Sep 2022US 2022/0302263 A1Flosfia Inc.
- Oxygen getters for activation of group v dopants in ii-vi semiconductor materials8 Jul 2021US 2021/0210606 A1Alliance for Sustainable Energy, LLC
- Crystalline oxide semiconductor film and semiconductor device3 Oct 2019US 2019/0305091 A1Flosfia Inc.
- Source and drain formation using self-aligned processes30 May 2019US 2019/0164756 A1International Business Machines Corporation
- Active switch array substrate, manufacturing method therefor, and display panel using the same25 Oct 2018US 2018/0308876 A1Chongqing Hkc Optoelectronics Technology Co., Ltd.
Most cited
By later US patents
- Isoelectronic co-doping87US 6,815,736 B2Midwest Research Institute · 2004
- Homoepitaxial layers of p-type zinc oxide and the fabrication thereof24US 6,624,441 B2Eagle-Picher Technologies, LLC · 2003
- High-conductivity semiconductor material having a dopant comprising coulombic pairs of elements18US 5,767,533 A1998
- P-type group II-VI semiconductor compounds18US 7,161,173 B22007
- Method of fabricating a semiconductor pn junction16US 4,526,632 AJun-Ichi Nishizawa · 1985