Array substrate for thin-film transistor and display device of the same
AssigneeLG Display Co., Ltd.
InventorsChangeun Kim, Jeongeun Baek, Yonggyoon Jang, Sungjin Kim
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Abstract
A carbon allotrope and a display device including the same are disclosed. The thin-film transistor array substrate, comprising a substrate, a gate electrode on the substrate, an active layer comprising a first active layer, which opposes the gate electrode and is adjacent to the gate electrode thereby comprising a semiconductor material and a plurality of carbon allotropes, and a second active layer, which is in contact with the first active layer and comprises a semiconductor material, a gate insulating film between the gate electrode and the active layer, and a source electrode and a drain electrode respectively in contact with the active layer.
Claims23
A thin-film transistor array substrate, comprising:
- a substrate;
- a gate electrode on the substrate;
- an active layer comprising a first active layer, which opposes the gate electrode and is adjacent to the gate electrode thereby comprising a semiconductor material and a plurality of carbon allotropes, and a second active layer, which is in contact with the first active layer and comprises a semiconductor material, the second active layer positioned farther from the gate electrode than the first active layer;
- a gate insulating film between the gate electrode and the active layer;
- and
- a source electrode and a drain electrode respectively in contact with the active layer,
- wherein the second active layer further comprises a plurality of carbon allotropes, and a content ratio being accounted by the carbon allotropes in the first active layer is higher than a content ratio being accounted by the carbon allotropes in the second active layer.
A display device, comprising:
- a substrate;
- a gate electrode on the substrate;
- an active layer comprising a first active layer, which opposes the gate electrode and is adjacent to the gate electrode thereby comprising a semiconductor material and a plurality of carbon allotropes, and a second active layer, which is in contact with the first active layer and comprises a semiconductor material, wherein the second active layer is positioned farther from the gate electrode than the first active layer;
- a gate insulating film between the gate electrode and the active layer;
- a source electrode and a drain electrode respectively in contact with the active layer;
- an organic insulating film on the source electrode and the drain electrode;
- and
- a pixel electrode on the organic insulating film,
- wherein the second active layer further comprises a plurality of carbon allotropes, and a content ratio being accounted by the carbon allotropes in the first active layer is higher than a content ratio being accounted by the carbon allotropes in the second active layer.
Dependencies are inferred from the claim text.