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US 5,767,533 AGranted
High-conductivity semiconductor material having a dopant comprising coulombic pairs of elements
OwnerHonnavalli R. Vydyanathinventor
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OwnerHonnavalli R. Vydyanathinventor
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A method of providing shallow acceptor and donor energy levels to produce higher conductivity semiconductor materials, relies on the coulombic pairing of donor and acceptor elements. One exemplary embodiment is applied to create shallow acceptor levels in the III-V nitride materials via the coulombic pairing of group I elements which, in principle, act as double acceptors occupying metal lattice sites with group IV or group VI elements which act as single donors occupying metal or nitrogen lattice sites, respectively. The resulting pairs act as single acceptors with an energy level much closer to the valence band edge than that of either the first or second level of the group I element acceptors in their unpaired state. This approach, when optimized, can result in creating acceptor levels much shallower than the Mg acceptors currently used to make p-type GaN and its alloys.
A III-V semiconductor material doped with a material comprising an acceptor element from group I and donor element from groups IV and VI, the acceptor element having a double valence and the donor element having a single valence, the acceptor and donor elements having been paired coulombically to provide single valence acceptor pairs to dope said semiconductor material.
A III-V nitride semiconductor doped with a material comprising an acceptor element from group I and donor element from groups IV and VI, the acceptor element having a double valence and the donor element having a single valence, the acceptor and donor elements having been paired coulombically to provide single valence acceptor pairs to dope said nitride semiconductor.
A III-V semiconductor material p-doped with coulombic pairs of first and second elements, the first element taken from the group of elements consisting of Li, Na, K, Cu, Ag and Au;
A III-V nitride semiconductor p-doped with coulombic pairs of first and second elements, the first element taken from the group of elements consisting of Li, Na, K, Cu, Ag and Au;
A light emitting semiconductor device fabricated from a III-V material and being doped with a concentration of coulombic pairs of elements comprising an element from group I and an element from group IV or group VI.
A blue-light emitting p-doped GaN semiconductor device having a dopant formed from a concentration of coulombic pairs of elements comprising an element from group I and an element from group IV or group VI, each said coulombic pair exhibiting a single valence of an acceptor ion.
Dependencies are inferred from the claim text.